1N5259B-TP Allicdata Electronics
Allicdata Part #:

1N5259B-TPTR-ND

Manufacturer Part#:

1N5259B-TP

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 39V 500MW DO35
More Detail: Zener Diode 39V 500mW ±5% Through Hole DO-35
DataSheet: 1N5259B-TP datasheet1N5259B-TP Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01191
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 39V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 30V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N5259
Description

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The 1N5259B-TP is a zener diode categorized under single diodes. It is widely used in many industries, including automotive, industrial, commercial, military, and aerospace. This diode is designed to provide a reliable and cost-effective solution for applications requiring protection from oscillations and electrical transients.The 1N5259B-TP is capable of withstanding up to 4.5 volts in reverse voltage, making it ideal for a range of applications, such as regenerative braking circuits, overvoltage protection, lightning protection, surge suppression, and switch mode power supplies. It is also commonly used in automotive, military and aerospace applications for voltage stabilizing circuitry.The 1N5259B-TP is composed of a N-type semiconductor layer which is sandwiched between two P-type layers. During operation, the electrons from the N-type layer freely pass through the material towards the depletion layer formed by the junction of the two P-type layers. When a forward bias voltage is applied, the electric field at the junction rapidly increases the current.The electric current is limited by the size of the leading edge of the depletion layer. The reverse bias voltage drops across the barrier, thus stabilizing the circuit and regulating the forward current. Because of the presence of the field, the reverse voltage drop is proportional to the reverse current, creating a predictable, regulated output.The 1N5259B-TP zener diode also offers a high tolerance for surges and transients. It has a high junction capacitance which can efficiently absorb transients. The zener diode also offers excellent electrical characteristics, making it suitable for use in a range of applications, including high frequency circuits. In addition, the high temperature rating makes it suitable for use in temperatures up to 125°C.Overall, the 1N5259B-TP zener diode is an ideal choice for applications requiring reliable protection from reverse voltage and oscillations. It is highly compatible with a range of applications and can provide reliable protection from electrical transients. With its high temperature rating, it is a great solution for electronic circuits exposed to high temperatures.

The specific data is subject to PDF, and the above content is for reference

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