
Allicdata Part #: | 1N5260B-ND |
Manufacturer Part#: |
1N5260B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 43V 500MW DO35 |
More Detail: | Zener Diode 43V 500mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 43V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 93 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 33V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5260 |
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The 1N5260B Zener diode is a high-performance single rectifier diode with a maximum power dissipation rating of 500 mW. The diode is suitable for use as a voltage regulator in switching power supplies. It also finds application in over-voltage protection in battery-charging systems, AC-DC converters, DC-DC converters, and power amplifiers.
The diode offers protection against transients, high-surges and spikes, and the absolute maximum rating of break down voltage is 24 V. The Zener Reverse Stand Off Voltage (VZ) of the device is 22 V and it guarantees low leakage current when operated at that level. With its superior impurity profile, the component that makes up the 1N5260B is designed to prevent distortion of the signal and offers an extremely good noise immunity. In these applications, the component offers an excellent temperature stability for additional regions of operation.
The component works on the same principle as a Zener diode, whereby the Zener voltage (VZ) is the voltage necessary to make the component conduct in a reverse direction. The Zener diode is then used to set a reliable and stable voltage over the full range of operating temperatures. The component\'s ability to evenly transfer the current through the whole structure is what distinguishes it from ordinary diodes. The 1N5260B also contains a lattice structure to minimize the capacitance and maximize power dissipation.
The device also has a breakdown voltage of 24 V and an IZT of 3.2 mA. In addition, it has low forward voltage and guaranteed minimum Zener impedance. The component has a maximum reverse voltage of 20 V and a typical reverse leakage current of 100 μA. The diode also includes hardware that is designed to ensure breakdown in the event of an overload current. It is also a reliable solution for protecting power electronics.
In applications where performance stability and repeatability are key, the 1N5260B is an ideal choice. It offers both thermal and electrical stability and is used in a variety of applications that require accurate and reliable control of voltages. The device is ideal for power supplies and over-voltage protection and can be used in several types of equipment and circuits. The diode also has an impressive power dissipation rating and offers excellent protection against voltage transients.
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