1N5747B

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	30V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	80 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 21V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35
Base Part Number:	1N5747

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Overview of the 1N5747BThe 1N5747B is a single-doped zinc oxide (ZnO) Zener diode, which is capable of handling surges up to 75A, making it ideal for a variety of applications such as voltage regulation, reverse protection, and transient suppression. It has an operating temperature range from -65°C to 150°C and features a low forward-voltage drop of 0.45V, making it an attractive option for applications requiring high-current capability and low power dissipation.Application FieldThe 1N5747B diode is designed for use in a range of applications, including power supplies, motor drivers, voltage regulation, and reverse protection. Its high surge capability of up to 75A makes it ideal for applications where reliable high-current reliability is required. It can also be used in DC-DC converters and charge controllers, as the low forward voltage drop significantly reduces power dissipation.In addition to its application in power supplies and motor drivers, this diode can also be used in circuit protection systems. Its ability to handle up to 75A of surge current makes it a reliable protective device for systems which need protection from over-voltage and over-current situations. Furthermore, the 1N5747B is also suitable for high-voltage transient suppression applications, as the low-impedance intrinsic to the device helps to prevent current spikes, thus protecting other system components from damage.Working PrincipleThe 1N5747B works by utilizing the principle of Zener Breakdown. When a reverse voltage is applied across the diode, there is a sudden increase in the electric field strength across the junction, causing some of the electrons to be freed from their respective atoms, and creating a region of high electric field within the junction. This region known as the Zener region, and its high electric field strength causes a sudden increase in the current flowing through the diode, thus allowing the diode to regulate the voltage applied across it.The 1N5747B is designed to regulate the voltage at a reverse breakdown voltage of 5.7V. When a voltage greater than the breakdown voltage is applied, the 1N5747B will start to conduct current, thus regulating the voltage. In this configuration, the 1N5747B operates as a Zener diode and can be used for a variety of voltage regulation and reverse protection applications.ConclusionThe 1N5747B is a reliable single-doped ZnO Zener diode capable of handling up to 75A of surge current. Its low forward-voltage drop of 0.45V makes it suitable for use in applications which require high-current capability and low power dissipation. It is commonly used in power supplies, motor drivers, voltage regulation, and reverse protection applications. Furthermore, the 1N5747B can also be used in circuit protection systems and high-voltage transient suppression applications, due to its ability to protect other system components from damage. This is possible through the Zener breakdown mechanism which is implemented within the diode, allowing it to regulate the voltage applied across it at a specific reverse breakdown voltage.

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