1N5908G

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The 1N5908G TVS diode is a device typically used to protect electronic circuits from electrostatic discharge (ESD) caused by static electricity. It is designed to rapidly clamp the voltage, diverting the ESD to ground, preventing damage to the system. The device is optimised to provide maximum protection against ESD shocks of greater than 8kV contact and 15kV air discharge as specified in the IEC 61000-4-2 international standard. The 1N5908G provides a low clamping voltage and high surge current capability making it suitable for a variety of applications.

Application Field

Due to its low clamping voltage and high surge current capability, the 1N5908G is suitable for a wide range of applications requiring ESD protection. These include computing, telecoms, consumer electronics and automotive applications. In computing, the 1N5908G would be used on interface ports such as USB or Ethernet, protecting the circuit from electrostatic discharges which may be caused, for example, when the user plugs and unplugs the cable.

In telecoms, the device would provide protection on network devices, such as routers or gateways, from ESD pulses caused by lightning and telecom switching surges. For consumer electronics, the 1N5908G would be found protecting audio/video ports as well as devices which interface to other accessories, such as headphones or game consoles.

Automotive applications include data and communication systems, such as CAN-BUS, LIN-BUS and Bluetooth. The 1N5908G offers a good clamping voltage and a surge current capability, ideal for providing ESD protection in the automotive environment.

Working Principle

The 1N5908G is an ESD-protected diode. Its job is to clamp the ESD pulse to a safe voltage level and dissipate the current caused by the transient pulse. Under normal operating conditions, the diode is in its high-impedance state and does not conduct current. During an ESD transient however, the diode\'s breakdown voltage is reached and the device begins to conduct current, clamping the voltage to its breakdown voltage.

In the 1N5908G, the breakdown voltage is around 6.5V. As the ESD pulse is applied to the device and the voltage increases above 6.5V, the diode begins to conduct. The diode’s internal resistance (collector-to-emitter resistance) is very low, typically around 0.1Ω. This low resistance is important to ensure that the ESD pulse is dissipated quickly and effectively.

Once the diode has begun to conduct, the current is limited by the ESD pulse’s peak current and the device’s surge capability (Ipp). The peak current is the maximum possible current that can flow through the diode. The surge capability is the maximum current that the device can sustain for a specified period of time. For the 1N5908G, the Ipp is typically specified at 25A.

Once the ESD pulse has passed, the diode will return to its high-impedance state. The device will be unaffected by the ESD transient and can continue to provide effective protection for the system.

Conclusion

The 1N5908G is a TVS diode specifically designed to protect electronic circuits from ESD transients. It offers a low clamping voltage and high surge current capability making it suitable for a range of applications. It is optimised to provide maximum protection against ESD shocks of greater than 8kV contact and 15kV air discharge as specified in the IEC 61000-4-2 standard. The diode operates by quickly clamping the voltage of an ESD pulse to its breakdown voltage and dissipating the current. Once the ESD pulse is dissipated, it returns to its high-impedance state and continues to provide ESD protection for the system.

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