Allicdata Part #: | 1N5929BGOS-ND |
Manufacturer Part#: |
1N5929BG |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 15V 3W AXIAL |
More Detail: | Zener Diode 15V 3W ±5% Through Hole Axial |
DataSheet: | 1N5929BG Datasheet/PDF |
Quantity: | 16233 |
1 +: | $ 0.23310 |
10 +: | $ 0.18774 |
100 +: | $ 0.12783 |
500 +: | $ 0.09589 |
1000 +: | $ 0.07192 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 15V |
Tolerance: | ±5% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 9 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 11.4V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | Axial |
Base Part Number: | 1N5929 |
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1N5929BG is a two-leaded Zener diode which belongs to Single. It is the most suited for applications requiring the protection of the output of an electronic circuit against overvoltage. The diode is usually operated in the zener region so that it can be used to facilitate exact voltage regulation and electrical isolation between different circuits.
The Zener breakdown or avalanche is a phenomenon in which an increase in electric current through an interjunction region of a semiconductor material decreases the depletion layer in the device and hence, increases the electric field and generates hole-electron pairs.
The 1N5929BG is a unique type of diode as it exhibits avalanche breakdown capability. As the breakdown voltage of a normal diode varies with the temperature of the device whereas the 1N5929BG has a relatively stable breakdown voltage across different temperatures. In addition, it also has a very low leakage current when forward biased and low turn-on voltage.
The working principle of 1N5929BG Zener diodes is the same as any other Zener diode. When forward-biased, electrons move easily from the N-type material into the P-type material and holes move in the opposite direction. This creates an electric current. When reverse-biased, however, the depletion zone at the junction widens and blocks electrons and holes from flowing. The junction, thus, does not conduct.
When the reverse voltage exceeding breakdown voltage is applied, the electric field near the junction becomes sufficient to break down the depletion layer, and hole-electron pairs are created. This hole-electron pairs recombine and form new electrons, which in turn generate additional hole-electron pairs. Hence, an avalanche process occurs. The current between the two materials then increases exponentially and a very small increase in the reverse voltage is associated with a large increase in current.
The use of 1N5929BG can be in various electronic components and digital applications, such as circuits that require overvoltage protection, line regulation, current regulation, constant voltages, noise suppression, buffering, and etc. Moreover, the 1N5929BG is particularly suitable for linear voltage regulators, voltage dropping and digital data transmission applications as it has low noise and good capacity to suppress electrical interference.
In summary, 1N5929BG is a Zener diode that belongs to Single. Its main function is to provide overvoltage protection for electronic circuits. The diode works based on the principle of avalanche breakdown and has a stable breakdown voltage across different temperatures. Moreover, it has low leakage current, low turn-on voltage, and good noise suppression capability. As a result, it can be used for various applications, such as linear voltage regulators, voltage dropping and digital data transmission.
The specific data is subject to PDF, and the above content is for reference
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