Allicdata Part #: | 1N5932BP/TR12-ND |
Manufacturer Part#: |
1N5932BP/TR12 |
Price: | $ 0.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 20V 1.5W DO204AL |
More Detail: | Zener Diode 20V 1.5W ±5% Through Hole DO-204AL (DO... |
DataSheet: | 1N5932BP/TR12 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.88200 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 20V |
Tolerance: | ±5% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 14 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 15.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Base Part Number: | 1N5932 |
Description
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1N5932BP/TR12 is a Single Zener Diode product belonging to the Diodes product family.The 1N5932BP/TR12 is a surface-mount, 2.4V, 400mW, Standoff Zener diode, ideal for discrete applications.It has superior surge capability, low series resistance, and excellent electrical characteristics. The 1N5932BP/TR12 is suitable for a wide range of applications, including transistor protection and general purpose ESD protection.The 1N5932BP/TR12 includes a single Zener diode in a single-piece, epoxy-molded, surface-mount package. It has a low forward voltage drop, low series resistance and reverse leakage, and a low capacitance. The 1N5932BP/TR12 features an ultra-low power consumption, resulting in a miniature size and superior electrical characteristics. The Zener diode also has a low series resistance and an extended reverse leakage range, making it an ideal choice for high-voltage protection applications.The 1N5932BP/TR12 utilizes a back-to-back configuration with two diodes providing increased surge capability. This configuration also reduces the inductive kick-back when the diode is turned off, improving the power integrity of the device. The Zener diode also features an extended reverse leakage range, ideal for high-voltage protection applications. Overall, the 1N5932BP/TR12 is an ultra-low-power, high-voltage protection device with superior surge capability and excellent electrical characteristics.The 1N5932BP/TR12 is primarily used for ESD protection, transistor protection, and general-purpose applications. The Standoff Zener diode\'s low forward voltage drop, low series resistance, and extended reverse leakage range make it an ideal choice for these applications. It can also be used as a voltage-controlled switch in applications where medium-to-high-voltage protection is required.The 1N5932BP/TR12 utilizes a back-to-back configuration with two diodes providing increased surge capability. This configuration also reduces inductive kick-back when the diode is turned off, improving power integrity of the device. The Zener diode also features an extended reverse leakage range, making it ideal for high-voltage protection applications.The working principle of the 1N5932BP/TR12 is simple. The diode is connected in reverse bias to form a Zener diode. When a voltage greater than the Zener voltage is applied to the diode, it breaks down, supplying current and maintaining the voltage across it at the Zener voltage. This ensures that a voltage greater than the Zener voltage will not pass through the diode and will be clamped to the Zener voltage.Overall, the 1N5932BP/TR12 is a low-power, ultra-high-voltage protection device with superior surge capability and excellent electrical characteristics. Its configuration also reduces the inductive kick-back and extended reverse leakage range makes it an ideal choice for high-voltage protection applications, such as ESD protection, transistor protection, and general purpose applications.The specific data is subject to PDF, and the above content is for reference
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