1N5933PE3/TR12

The 1N5933PE3/TR12 is a single, Zener diode manufactured by NXP Semiconductors. This diode has a specifically designed anode plastic encapsulation that prevents it from being damaged by moisture, as well as an operating voltage of 3.3 to 3.63V. It is also rated for an operating temperature range of -65 to +150 degree Celsius. The diode has several advantages over other Zener diodes, making it ideal for a wide range of applications.

The 1N5933PE3/TR12 can be used in a number of different applications. It is ideal for use in over-voltage protection, voltage regulation, and voltage reference circuits. Its wide operating temperature range makes it suitable for use in automotive, industrial, and consumer applications. It is also an ideal choice for additional protection for a wide range of powered systems, including communication systems, power supplies, and power converters.

The 1N5933PE3/TR12 functions by having a reverse biased PN junction diode that is then connected in series to an internal resistor. This allows it to create a voltage barrier between the anode and cathode. When a voltage that is larger than the reverse breakdown voltage (RBV) of the diode is applied, the voltage on the anode side will be limited to the RBV value. This voltage is limited due to the current allowed to pass through the diode becoming constricted by the internal resistor. This has the effect of limiting the voltage and protecting the system components from over-voltage events.

The 1N5933PE3/TR12 is an excellent choice for applications that require stable and reliable performance, withstanding intense voltages and temperatures. It is designed to compress the voltage level in a circuit, allowing for for the needed components to be protected from large over-voltage events. It is a durable, high performance diode that can be used in a variety of applications.