1N5954BP/TR8

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The 1N5954BP/TR8 is an NEC-branded zener diode that belongs to the single diode family. Such diode is specifically designed to protect voltage sensitive components in applications where improved immunity against electrostatic discharge is required. The voltage rating of 1N5954BP/TR8 is nominally 5 volts to 8 volts and it is equipped with an angled lead form that can be used to vertically mount it on the Printed Circuit Board. Its working principle is based on Zener effect.

Structure

The 1N5954BP/TR8 diode features a delicate construction and consists of a PN junction type semiconductor. It is dipped in silicon nitride to increase its tolerance against electrical interference and to improve mechanical stability and then resleeved with a protective material coating. Generally, Zener diodes feature a lower breakdown voltage than their counterparts, rectifier diodes, which is a property that is inherent of this type of diode.

Field of Application

The 1N5954BP/TR8 is usually used in applications involving overcurrent protection, such as regulating the output voltage of a DC-DC converter, as a voltage reference, and as a voltage regulator in high-side switch circuits. Its angled lead form allows it to be easily mounted onto the Printed Circuit Board in space-constrained areas which makes it a great choice for vertical signal implantation or cross-connecting between different components.

Furthermore, the notably low forward voltage of this diode makes it one of the most efficient and reliable protection devices against electrostatic discharges (ESD) in automated test systems. A well-constructed ESD protection unit using 1N5954BP/TR8 diodes is usually placed at strategic points of a Printed Circuit Board in order to provide the most effective protection against unwanted impulse current.

Working Principle

The 1N5954BP/TR8 diode works based on the Zener effect which is defined as the leakage current in a reverse biased PN junction generated when the reverse bias voltage exceeds the threshold voltage of the semiconductor. Such phenomenon is known as a Zener breakdown. This results in a current flow between the anode and cathode that is limited by the Zener impedance of the diode.

The Zener breakdown voltage is usually specified in the datasheet and should always be greater than the maximum input voltage of the device. The 1N5954BP/TR8 diode features an avalanche breakdown voltage of 5V to 8V, in which case the characteristic inverse exponential relationship between the current and voltage can be observed.

Features and Benefits

The 1N5954BP/TR8 diode offers several benefits. Its Zener impedance can be adjusted to a desired level through proper selection of the breakdown voltage, which is usually done by the engineer who designs the circuit. In addition, the forward voltage of the 1N5954BP/TR8 is notably lower compared to most of its counterparts. This enables it to deliver a faster response time when switching current and, consequently, to deliver a lower ESD protection breakpoint.

The 1N5554BP/TR8 diode can operate over a wide temperature range between -55° Celsius to 125° Celsius and it is suitable for use in an environment that may have both low and high temperature oscillations, such as vehicles and factories.

Conclusion

In conclusion, the 1N5954BP/TR8 diode is an excellent choice for applications that require robust ESD protection, voltage regulation and reference, and overcurrent protection. Despite the limitation of its Zener impedance, the 1N5954BP/TR8 offers several benefits, such as a lower forward voltage, a wide temperature range, and a small form factor. This makes it a reliable and efficient protection device for a wide range of applications.

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