Allicdata Part #: | 1N5955AP/TR8-ND |
Manufacturer Part#: |
1N5955AP/TR8 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 180V 1.5W DO204AL |
More Detail: | Zener Diode 180V 1.5W ±10% Through Hole DO-204AL (... |
DataSheet: | 1N5955AP/TR8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 180V |
Tolerance: | ±10% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 900 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 136.8V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Base Part Number: | 1N5955 |
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The 1N5955AP/TR8 is a silicon Zener diode belonging to the Single Zener diode subclass of diodes and is used for very specific applications. The diode is designed to operate with a breakdown voltage of 30 Volts and 5% tolerance. It has a reverse surge power rating of 500 mW and is comprised of a heavily doped junction layer that is capable of conducting large amounts of current.
The Zener diode is a two terminal, general purpose, unidirectional device which can be used to regulate, protect and boost the voltage. It is used in a variety of applications that require a fixed, regulated voltage. This device is widely used in precision voltage regulation, low voltage spike suppression, switching voltage regulators, power supply applications and voltage clamping.
Zener diodes consist of two layers of semiconductor, an anode and a cathode, connected in a diode format. When the breakdown voltage is reached, the diode acts like a short circuit, allowing all the current to flow from the anode to the cathode. The breakdown voltage becomes a Zener voltage, which is the same in both directions of the current. By utilizing different layers of semiconductor in the design of the 1N5955AP TR8 Zener diode, the flow of current can be regulated and controlled.
A 1N5955AP/TR8 Zener diode will function correctly when the reverse breakdown voltage, or Zener voltage, is less than the PIV. This type of diode has a high forward current capability but a limited reverse breakdown current capability. It is also important to have a proper power rating in order to prevent any overstressing of the component. Unlike a Schottky diode, the Zener diode will not only have a lower power dissipation but will also have a higher reverse leakage current.
The working principle of 1N5955AP/TR8 is based on the fact that when a forward voltage is applied, the diode becomes a short circuit. As a result, the reverse current through the diode increases with increasing forward voltage, until the junction breakdown voltage is reached and the diode becomes a low-resistance path. When the breakdown voltage is reached, the boron present in the junction layer will act as a Zener diode, and the electrical current can flow in both directions. When the current is reversed, the diode behaves like a normal diode, yet will still keep its characteristic of high current conduction in the reverse direction when the breakdown voltage is reached.
The 1N5955AP/TR8 Zener diode is a versatile device that can be used in many different applications. It is perfect for low voltage spike suppression, precision voltage regulation, switching voltage regulators and voltage clamping. It is designed for use at 30 Volts and has a 5% tolerance for variations in its breakdown voltage. The diode is capable of handling large surge power and the junction layer is designed for high power conduction. With its versatile design, it is the perfect solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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