Allicdata Part #: | 1N5956AE3/TR13-ND |
Manufacturer Part#: |
1N5956AE3/TR13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 200V 1.5W DO204AL |
More Detail: | Zener Diode 200V 1.5W ±10% Through Hole DO-204AL (... |
DataSheet: | 1N5956AE3/TR13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 200V |
Tolerance: | ±10% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 1200 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 152V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Base Part Number: | 1N5956 |
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Diodes are often used for applications such as rectification, signal and power conversion, switching and protection. They can be either basic components or more complex and integrated components. Zener diodes are a type of diode which allows current to flow in either direction and can be used in a range of applications. As an example, the 1N5956AE3/TR13 is a single zener diode with a three-terminal design.
The 1N5956AE3/TR13 is part of a range of Zener diodes produced by Nexperia and is a 3 terminal SOT-223 package device. It is capable of providing up to 600mW of power. The device has a breakdown voltage (Vz) of 7.5V and has a Zener capacitance of 1000pF and an operating temperature range of - 40°C to 85°C.
In terms of applications, the 1N5956AE3/TR13 is suitable for use in a range of electronic products and systems, such as automotive and audio/video equipment, car alarms, smoke detectors, security devices and power supplies. It can be used to protect against overvoltage or reverse wiring, or to provide filtering or current limiting. The device also supports a variety of digital and analog signals.
In terms of the working principle of the 1N5956AE3/TR13, it has a reverse biased junction. When the diode is reverse biased, electrons are attracted to the P-type material in the diode and holes are attracted to the N-type material, creating an electric field. As the reverse bias voltage increases, the electric field increases and eventually the breakdown voltage is reached. This is the point at which the electric field is so strong that it breaks though the depletion layer and allows current to flow through the diode. This is also known as the Zener effect.
In summary, the 1N5956AE3/TR13 is a single Zener diode with a three-terminal design, which is capable of providing up to 600mW of power. It is suitable for applications such as automotive, audio/video and other electronic systems, and can be used to protect against overvoltage or reverse wiring, or to provide filtering or current limiting. The working principle of the device is based on the reverse biased junction and the Zener effect.
The specific data is subject to PDF, and the above content is for reference
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