Allicdata Part #: | 1N6008B-ND |
Manufacturer Part#: |
1N6008B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 22V 500MW DO35 |
More Detail: | Zener Diode 22V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N6008B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 22V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 55 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 17V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N6008 |
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The 1N6008B is a single Zener diode that\'s most commonly used in voltage regulation, voltage references and overvoltage protection. The diode is a type of LED, but instead of producing light it works as a voltage regulator, controlling the amount of current flow through a circuit and avoiding design complications from fluctuating input voltage.
The 1N6008B is a general-purpose silicon diode capable of blocking up to 20 volts, making it an ideal choice in applications where ordinary rectifying diodes may not be ideal. Its resistance is much lower than a typical diode, so it can pass a lot more current, allowing for better regulation of voltage in multiple circuits.
The 1N6008B is a Zener diode, a type of diode which utilizes the Zener effect, which is the ability of a reverse voltage to increase the electrical conductivity of a PN junction, allowing it to act as a controlled resistance. The Zener diode has a predetermined breakdown voltage, or Zener voltage, that is designed to be less than the normal breakdown voltage.
When a voltage higher than the Zener voltage is applied to the anode of the 1N6008B, the electrical field across the depletion region increases in strength, causing the electrons to accelerate and collide with the atoms of the PN junction. This collision then releases energy in the form of photons, creating a conductive path for current to flow.
When the voltage drops below the Zener voltage, the current going through the diode is reduced and decreased significantly. This stabilizes the voltage output at a predetermined level and prevents spikes and dips in the voltage, making it ideal for use in protection circuits.
The 1N6008B can have many practical applications, including voltage regulators, voltage references, overvoltage protection and series voltage regulators. It can be used as a low power voltage regulator in power supplies, an overvoltage protector in automotive and industrial circuits, a voltage reference accuracy in power instrumentation circuitry, or a shunt or series voltage regulator in battery operated devices.
Features of the 1N6008B diode include a power rating of 300mW, a maximum reverse voltage of 20 volts, and a maximum reverse current of 250uA. In addition, the diode has a maximum forward current of 3A, a low forward voltage of 0.76V and a fast switching speed.
In summary, the 1N6008B diode is an ideal choice for use in voltage regulation, voltage references and overvoltage protection circuits. Its Zener effect allows it to act as a voltage regulator, providing a stable level of current at a predetermined voltage, thus making it a popular choice for a multitude of applications. Its low power rating and high current capacity makes it suitable for most electronic applications.
The specific data is subject to PDF, and the above content is for reference
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