1N6103A Allicdata Electronics
Allicdata Part #:

1N6103AS-ND

Manufacturer Part#:

1N6103A

Price: $ 8.76
Product Category:

Circuit Protection

Manufacturer: Semtech Corporation
Short Description: TVS DIODE 5.7V 11.2V AXIAL
More Detail: N/A
DataSheet: 1N6103A datasheet1N6103A Datasheet/PDF
Quantity: 1000
100 +: $ 7.96180
Stock 1000Can Ship Immediately
$ 8.76
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5.7V
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.2V
Current - Peak Pulse (10/1000µs): 44.6A
Power - Peak Pulse: 500W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: --
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Description

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The 1N6103A is a TVS (Transient Voltage Suppression) diode which protects electronic circuits against electrical transients including ESD (electro-static discharge), EFT (electrical fast transients), surges, and other over-voltage events. It is commonly found in electric vehicles, industrial equipment, consumer gadgets, automotive industry, Ethernet communication systems, power cables, telecommunications, and consumer systems. Generally, the 1N6103A is used to protect ICs, temperature sensors, SMC, and other semiconductors from over-voltage events.

The 1N6103A is designed with a variety of features to provide reliable protection. It is constructed of an N-channel junction MOSFET with low capacitance (1.5 pF typical), making it suitable for fast rise time applications. The device supports reverse and forward voltages up to ±30 V and peak pulse currents of 2.5 A (10/1000 μs). Moreover, 1N6103A is equipped with an integrated ESD protection circuit which protects sensitive EMI filter components, varistors, and other components from lightning strikes, surge currents, and other transient voltages.

The working principle of the 1N6103A is based on a p-type diode with a reverse voltage-dependent breakdown threshold which provides a low-impedance path when the reverse voltage exceeds the breakdown voltage, in order to conduct unwanted currents away from the device leads. The device is designed to quickly and effectively reduce the amount of reverse leakage current, while providing high levels of transient protection. The low reverse voltage-dependent breakdown threshold of 1N6103A increases the diode speed to ensure that undesired voltage transients are quickly clamped.

In addition, 1N6103A is able to provide effective protection against EMI (electromagnetic interference) and ESD (electro-static discharge). It is capable of dissipating high levels of transient energy, allowing the device to operate efficiently while keeping EMI levels within safe limits. Furthermore, the device offers a wide working temperature range of -40℃ to +125℃, making it suitable for automotive applications or other extreme temperature environments. In conclusion, the 1N6103A is a highly reliable, fast, low-capacitance device with integrated ESD protection which provides protection to sensitive circuits and components against electrical transients and other over-voltage events.

The specific data is subject to PDF, and the above content is for reference

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