1N6103AUS Allicdata Electronics
Allicdata Part #:

1N6103AUS-ND

Manufacturer Part#:

1N6103AUS

Price: $ 14.64
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 5.7V 11.2V B SQ-MELF
More Detail: N/A
DataSheet: 1N6103AUS datasheet1N6103AUS Datasheet/PDF
Quantity: 88
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: $ 13.31190
10 +: $ 12.31150
25 +: $ 11.31310
100 +: $ 10.51440
250 +: $ 9.64936
Stock 88Can Ship Immediately
$ 14.64
Specifications
Voltage - Clamping (Max) @ Ipp: 11.2V
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 44.6A
Series: --
Voltage - Breakdown (Min): 7.13V
Voltage - Reverse Standoff (Typ): 5.7V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVSs (Transient Voltage Suppressors) are semiconductor devices designed specifically to protect sensitive electronic systems from over-voltage electrical transients. TVS diodes, in particular, are ideal for circuit protection from damaging lightning-induced overvoltage transients as well as other overvoltage faults. The 1N6103AUS is an example of a TVS diode (also commonly referred to as a TVS "zener") that offers excellent ESD protection as well as fast and effective clamping of overvoltage transients. This article will examine the application field and working principle of 1N6103AUS.

The 1N6103AUS is a small signal surface mount diode designed to protect sensitive electronic systems from over-voltage electrical transients. It offers superior ESD protection and fast and effective clamping of overvoltage transients. This TVS diode has a maximum working voltage of 5.5V and a low clamping voltage of 5.2V, making it ideal for protecting low voltage circuits that are susceptible to overvoltage transients. This diode also offers a fast response time of less than 1ns, allowing it to quickly and effectively clamp overvoltage transients.

The 1N6103AUS has a wide range of applications in the automotive, industrial, telecommunications, and consumer electronics markets. It can be used to protect 12V automotive systems, including airbags, fuel injectors, ABS systems, and ECUs. It is also a great tool for protecting sensitive electronic circuits in industrial applications, such as PLCs and motor controllers. In the telecommunications market, it can be used to protect sensitive power supply components from overvoltage transients. Additionally, its small size and low profile make it a great choice for protecting sensitive components in small consumer electronics like smart phones and tablets.

The 1N6103AUS is a multi-purpose diode that works on the principle of reverse breakdown. It is made up of two p-type and two n-type materials that form two separate junctions, also known as a PN diode. When the diode is connected to a power source, the voltage across the two junctions is equal, and current will not flow through the diode until the voltage increases to a certain critical value. This critical value is known as the breakdown voltage and is determined by the properties of the two p-n junctions. When the applied voltage reaches this breakdown level, the resistance of the diode quickly drops and a current will flow through the diode. This is known as the avalanche breakdown of the diode, and is the basis of the diode\'s function.

In the case of the 1N6103AUS, the breakdown voltage is 5.2V. This is the value at which the diode will conduct. In the event of an overvoltage transient, the diode will quickly conduct current and limit the amplitude of the transient, thus protecting sensitive electronic components from damage.

In summary, the 1N6103AUS is an excellent choice for protecting sensitive electronic components from damaging overvoltage transients. It offers superior ESD protection and fast and effective clamping of overvoltage transients. The diode is made from two p-n junctions, and its avalanche breakdown voltage is 5.2V. It has a wide range of applications in the automotive, industrial, telecommunications, and consumer electronics markets.

The specific data is subject to PDF, and the above content is for reference

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