1N6110 Allicdata Electronics
Allicdata Part #:

1N6110S-ND

Manufacturer Part#:

1N6110

Price: $ 8.76
Product Category:

Circuit Protection

Manufacturer: Semtech Corporation
Short Description: TVS DIODE 11.4V 21.9V AXIAL
More Detail: N/A
DataSheet: 1N6110 datasheet1N6110 Datasheet/PDF
Quantity: 1000
100 +: $ 7.96180
Stock 1000Can Ship Immediately
$ 8.76
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 11.4V (Max)
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 21.9V
Current - Peak Pulse (10/1000µs): 22.8A
Power - Peak Pulse: 500W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: --
Operating Temperature: -65°C ~ 175°C (TA)
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Description

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TVS - Diodes, also known as Transient Voltage Suppressors (TVS), are a type of protection diode used to protect sensitive electronic components from transient voltage surges. The 1N6110 is a two-terminal, bidirectional transient-voltage-suppression diode specifically designed to protect sensitive electronic components from transient voltage surges. This device can be used to limit fast transients, such as those generated by high-energy inductive load switching circuits and also to provide a measure of protection from high levels of Electrostatic Discharge (ESD) encountered in certain applications.

The 1N6110 is designed to protect against voltage transients generated by the switching of motors, solenoids, relays, and other inductive circuits. It has a two-terminal structure that can be connected in-line or parallel with the load. The 1N6110 is bidirectional, protecting both positive and negative supply lines. It provides superior performance when compared to MOVs (Metal Oxide Varistors), SCRs (Silicon-Controlled Rectifiers) and CRDs (Capacitive Reverse-Pop Delay Devices).

The working principle of the 1N6110 is based on the avalanche breakdown property of the semiconductor material. Under normal operation, the 1N6110 operates in an off-state. When abnormal conditions occur, such as a large voltage surge, the applied voltage exceeds the breakdown voltage of the device and it goes into the avalanche breakdown mode. This in turn causes a large current to flow, which will then dissipate the excess voltage.

In addition, the 1N6110 has an integrated self-protection feature that prevents the damage caused by temperature runaway due to the excessive power dissipation that occurs when a large surge is present. This feature ensures the safety of the device during a surge condition and prevents self-destruction due to excessive power dissipation. The integrated self-protection feature is also very helpful in reducing the component count in a design.

The 1N6110 is a popular choice for applications such as controlling the power supply of equipment, suppressing high voltage surges on power lines, suppressing ESD, and protecting against electromagnetic interference. The device is designed to work effectively from DC to 1MHz, making it suitable for a large variety of applications. It is also available in a variety of package styles and sizes for easy integration into any existing design.

In conclusion, the 1N6110 is a versatile and reliable protection diode designed specifically for protecting a variety of electronic components from transient voltage surges. Its two-terminal structure, integrated self-protection feature, and wide frequency range make it an ideal candidate for a wide range of applications. Furthermore, its compact size and low cost make it a cost-effective solution to offer protection against unforeseen voltage transients.

The specific data is subject to PDF, and the above content is for reference

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