1N6139US Allicdata Electronics
Allicdata Part #:

1N6139US-ND

Manufacturer Part#:

1N6139US

Price: $ 12.33
Product Category:

Circuit Protection

Manufacturer: Semtech Corporation
Short Description: TVS DIODE 5.7V 11.8V
More Detail: N/A
DataSheet: 1N6139US datasheet1N6139US Datasheet/PDF
Quantity: 1000
100 +: $ 11.21470
Stock 1000Can Ship Immediately
$ 12.33
Specifications
Current - Peak Pulse (10/1000µs): 127.1A
Supplier Device Package: --
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Operating Temperature: --
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: --
Voltage - Clamping (Max) @ Ipp: 11.8V
Voltage - Breakdown (Min): 6.75V
Voltage - Reverse Standoff (Typ): 5.7V (Max)
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Bulk 
Description

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Many electronic applications have a need for protection from electrical transients, either due to power spikes or electrical noise from other components. These transient voltage suppressors, commonly referred to as TVS ( Transient Voltage Suppressor ) diodes, provide protection from electrically induced damage to a variety of electronic components and systems. The 1N6139US is an exemplary TVS diode, which has its applications and operating principles described in this article.

The 1N6139US from Vishay is an unidirectional device designed for protection of transients on data lines, telecom and cable television networks, automotive electronics, industrial electronics, computer peripherals and more. It boasts a low profile of just 0.85 mm, allowing it to fit in tight spaces, while still providing ultra-low leakage current of 2.5 nA (at 6V). Its high power dissipation of 225 mW, combined with a breakdown voltage of 5.9V, provides a very good performance that is rarely found in devices this small.

The operating principle of the 1N6139US is fairly simple. It consists of two main components: a PN junction and a Zener diode. The PN junction, which is the junction between the two different-doped semiconductor materials, forms a rectifier that allows current to flow in only one direction. The Zener diode is connected in reverse bias to the rectifying PN junction and serves to break down the electrical field when a certain voltage level is reached. This breakdown voltage is referred to as the device\'s clamping voltage or breakdown voltage.

When an overvoltage surge occurs across the 1N6139US, the PN junction becomes forward biased and the current start to increase exponentially. However, when the voltage increases above the breakdown or clamping voltage of the Zener diode, the device begins to conduct a surge current and effectively clamps the voltage across the device. The current flow then continues until the overvoltage condition is removed. This enables the protection of connected circuits from unwanted voltage transients.

The 1N6139US diode is capable of providing extraordinary levels of protection against transient voltage. Its extremely small form factor and high power dissipation make it an ideal choice for a variety of applications. It is an excellent example of a transient voltage suppressor diode, designed to offer reliable protection from transients. It is also capable of withstanding high temperatures, making it suitable for use in automotive electronics and other harsh environments.

The specific data is subject to PDF, and the above content is for reference

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