1N6147US Allicdata Electronics
Allicdata Part #:

1N6147US-ND

Manufacturer Part#:

1N6147US

Price: $ 12.08
Product Category:

Circuit Protection

Manufacturer: Semtech Corporation
Short Description: TVS DIODE 12.2V 23.4V
More Detail: N/A
DataSheet: 1N6147US datasheet1N6147US Datasheet/PDF
Quantity: 1000
100 +: $ 10.98470
Stock 1000Can Ship Immediately
$ 12.08
Specifications
Current - Peak Pulse (10/1000µs): 64.1A
Supplier Device Package: --
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Operating Temperature: --
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: --
Voltage - Clamping (Max) @ Ipp: 23.4V
Voltage - Breakdown (Min): 14.4V
Voltage - Reverse Standoff (Typ): 12.2V (Max)
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Bulk 
Description

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TVS - Diodes range from simple Zener diodes with series and shunt-based circuitry, to devices that are specially optimized to provide transient and ESD protection. The 1N6147US is a small, low-cost silicon avalanche breakdown diode, making it a great solution for a variety of applications when the risk of damage from electrostatic discharge (ESD) and voltage transients is significant.

The 1N6147US is a unidirectional device, so it only conducts current in one direction and is effective in applications involving either direct current (DC) or alternating current (AC). The main purpose of the 1N6147US is to protect a circuit or device from spikes and transients in the line voltage. It can handle impulses up to 5 Kilovolts (5KV) in magnitude and 125J in energy.

The 1N6147US achieves its protection from electrostatic discharges and voltage transients by employing an “avalanche breakdown”. Like a Zener diode, the 1N6147US has a PN junction whose breakdown voltage is greater than the applied voltage. The PN junction experiences a combination of both thermal and electric fields, and when the voltage across the junction reaches a certain point, it causes a transition to a lower energy state, resulting in an avalanche breakdown. When an avalanche breakdown occurs, the diode stops conducting and the voltage across it is clamped, protecting the circuit from potential damage.

The 1N6147US’s avalanche breakdown characteristics are well suited for a variety of applications. It can be used as a high voltage ESD suppressor, an over-voltage/reverse-bias protector, and a transient voltage/surge-suppressor. It is commonly used in consumer electronics, automotive, and medical device applications to protect circuits from damage due to static electricity, electromagnetic interference (EMI), voltage transients, spikes, and surges.

The 1N6147US is a great choice for applications looking for low cost, low power consumption, and good reliability when it comes to protection against voltage transients. It provides excellent protection against ESD and voltage transients, it is small and affordable, and it is relatively easy to implement into existing circuits.

The specific data is subject to PDF, and the above content is for reference

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