1N6278AHE3_A/D Allicdata Electronics
Allicdata Part #:

1N6278AHE3_A/D-ND

Manufacturer Part#:

1N6278AHE3_A/D

Price: $ 0.25
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 17.1V 27.7V 1.5KE
More Detail: N/A
DataSheet: 1N6278AHE3_A/D datasheet1N6278AHE3_A/D Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
2000 +: $ 0.22387
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Voltage - Clamping (Max) @ Ipp: 27.7V
Supplier Device Package: 1.5KE
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 54.2A
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Breakdown (Min): 19V
Voltage - Reverse Standoff (Typ): 17.1V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Box (TB) 
Description

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TVS - Diodes are commonly used in the Electronic industry to protect sensitive electronics components from electrostatic discharge (ESD) damage. The 1N6278AHE3_A/D device is a transient voltage suppressor diode specifically designed to protect devices from ESD damage.

The 1N6278AHE3_A/D is a unidirectional TVS diode device with a breakdown voltage of 6.8V. It is capable of dissipating up to 6.0 watts of power. Its working principle is based on an avalanche breakdown of the p-n junction of the diode, when high voltage current is applied to the device. The avalanche effect is when a large number of electrons within the diode are propelled across the depletion region of the device, leading to avalanche breakdown.

The 1N6278AHE3_A/D device is well suited for applications requiring both high surge and clamping capabilities. It is ideal for use in automotive, industrial control, telecommunications, computers, and medical devices. Some of the benefits that this device provides to the user are excellent surge capability, competitive pricing and small package sizes.

The application of the 1N6278AHE3_A/D device starts with the selection of the correct diode for the application. Factors to consider are the desired voltage breakdown, maximum power dissipation, surface mount vs. through hole mount and polarity. The diode is then connected in series with the line and loaded circuits in order to protect them from transient ESD events.

Once the device is connected, it works by providing a short, low impedance path for high energy transients. When the voltage across the transient voltage suppressor reaches the breakdown voltage, the diode is reverse biased. This allows the device to act as a clamping element and redirect the current away from the load circuit. The 1N6278AHE3_A/D can handle up to 6.0 watts of power, depending on other design parameters.

The 1N6278AHE3_A/D is a robust, versatile, and reliable transient protection device. Its low profile package and minimal external components make it the perfect ESD device for a diversity of industrial applications. The device is designed to provide maximum ESD protection while also reducing cost and board space.

The specific data is subject to PDF, and the above content is for reference

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