1N6311US Allicdata Electronics
Allicdata Part #:

1N6311US-ND

Manufacturer Part#:

1N6311US

Price: $ 9.68
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 3V 500MW B-SQ MELF
More Detail: Zener Diode 3V 500mW ±5% Surface Mount B, SQ-MELF
DataSheet: 1N6311US datasheet1N6311US Datasheet/PDF
Quantity: 1000
100 +: $ 8.71528
Stock 1000Can Ship Immediately
$ 9.68
Specifications
Series: --
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 29 Ohms
Current - Reverse Leakage @ Vr: 30µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes - Zener - Single - 1N6311US Application Field and Working Principle

The 1N6311US diode is a type of zener diode, and is a single unidirectional (uni directional) device intended to operate in an external circuit as a voltage regulator and to protect against reverse voltages. It is primarily used to protect transistors, integrated circuits, and other delicate electronic components from transient voltage surges and other electrical disturbances during the operation of electronic and communications equipment.The 1N6311US diode is designed for use in applications requiring high voltage protection and noise suppression, such as in broadcast and CATV frequencies, in military communications, and in high-speed telephone systems. The device is manufactured and tested to meet the specifications, including silicon-nitride/silicon-oxide layer and corona reduction requirements, of many leading manufacturers of discrete and hybrid electronic components.Zener diodes are semiconductor devices that are designed to operate as a voltage regulator and to provide protection against transient overvoltages and surges. The 1N6311US diode is a zener diode, with single directionality, having the ability to protect electronics and electrical systems from electrostatic discharge (ESD) and other electrical disturbances, while also introducing a low level of noise into the system.The 1N6311US device is comprised of two layers of doped semiconductor material, each having different electrical properties. The two layers form a junction between them. A zener diode typically operates with a negative bias (reverse bias) applied to its junction. In this condition, with the diode in reverse polarity, the electric field created by the electrical charge stored in the diode is brought close to the junction and a breakdown of the junction barrier occurs, allowing electrons to flow. Therefore, the voltage regulator\'s conduction point is determined by the breakdown voltage of the junction.The conduction point of the 1N6311US device is set at 6.3 volts, which is the breakdown voltage of the junction. By adjusting the external resistance across the junction, any voltage below 6.3 volts can be held to the diode’s terminals. In other words, any voltage applied to the Zener diode will be held at 6.3V, thus functioning as a voltage regulator. The device can be used in voltage suppression applications to absorb energy thus protecting delicate circuits from excessive voltages.The 1N6311US device also contains a layer of silicon nitride in between two layers of doped semiconductor materials. The layer of silicon nitride helps to reduce the amount of corona discharge and thus helps to increase the reliability of the diode.The 1N6311US diode is also used in noise suppression applications, as it limits the amount of voltage spikes, or noise, entering the circuit. This helps to reduce system noise and static, which can interfere with signal transmission and reception. The capacitor can also be adjusted to match a particular signal size to prevent signal interference.In summary, the 1N6311US diode is a single, uni-directional, zener diode designed for use in applications requiring high voltage protection and noise suppression. The diode is comprised of two layers of doped semiconductor material, with a layer of silicon nitride for corona discharge reduction. The device is specified to operate at 6.3V, and is able to protect delicate circuits by suppressing voltage surges and noise, thus providing a reliable solution for many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "1N63" Included word is 40
Part Number Manufacturer Price Quantity Description
1N6376G Littelfuse I... -- 1000 TVS DIODE 12V 21.2V AXIAL
1N6382HE3_A/D Vishay Semic... 0.26 $ 1000 TVS DIODE 8V 11.6V 1.5KE
1N6335US Microsemi Co... 12.4 $ 41 DIODE ZENER 30V 500MW B-S...
1N6315US Microsemi Co... 9.68 $ 1000 ZENER DIODEZener Diode
1N6376-E3/51 Vishay Semic... 0.41 $ 1000 TVS DIODE 12V 16.5V 1.5KE
1N6372 Microsemi Co... 13.28 $ 1000 TVS DIODE 45V 70V DO13
1N6305R Microsemi Co... 49.91 $ 1000 RECTIFIER DIODEDiode
1N6379G ON Semicondu... 0.0 $ 1000 TVS DIODE 22V 37.5V AXIAL
1N6301HE3/54 Vishay Semic... 0.0 $ 1000 TVS DIODE 138V 244V 1.5KE
1N6301-E3/73 Vishay Semic... 0.0 $ 1000 TVS DIODE 138V 244V 1.5KE
1N6312 Microsemi Co... 6.05 $ 1000 DIODE ZENER 3.3V 500MW DO...
1N6385-E3/54 Vishay Semic... 0.2 $ 1000 TVS DIODE 15V 21.4V 1.5KE
1N6377HE3_A/D Vishay Semic... 0.28 $ 1000 TVS DIODE 15V 20.6V 1.5KE
1N6319 Microsemi Co... 6.05 $ 1000 ZENER DIODEZener Diode
1N6303E3/TR13 Microsemi Co... 0.0 $ 1000 TVS DIODE 162V 287V CASE-...
1N6302AHE3_A/C Vishay Semic... 0.29 $ 1000 TVS DIODE 154V 246V 1.5KE
1N6301AE3/TR13 Microsemi Co... 0.0 $ 1000 TVS DIODE 145V 234V CASE-...
1N6375G ON Semicondu... 0.0 $ 1000 TVS DIODE 10V 16.7V AXIAL
1N6338US Microsemi Co... 9.68 $ 1000 ZENER DIODEZener Diode
1N6354US Microsemi Co... 11.78 $ 1000 ZENER DIODEZener Diode
1N6374-E3/54 Vishay Semic... 0.18 $ 1000 TVS DIODE 8V 11.5V 1.5KE
1N6346 Microsemi Co... 6.05 $ 1000 ZENER DIODEZener Diode
1N6311US Microsemi Co... 9.68 $ 1000 DIODE ZENER 3V 500MW B-SQ...
1N6382-E3/51 Vishay Semic... 0.41 $ 1000 TVS DIODE 8V 11.6V 1.5KE
1N6328US Microsemi Co... 9.68 $ 1000 ZENER DIODEZener Diode
1N6344US Microsemi Co... 9.68 $ 1000 ZENER DIODEZener Diode
1N6345US Microsemi Co... 9.68 $ 1000 ZENER DIODEZener Diode
1N6376HE3_A/C Vishay Semic... 0.29 $ 1000 TVS DIODE 12V 16.5V 1.5KE
1N6376 ON Semicondu... 0.0 $ 1000 TVS DIODE 12V 21.2V AXIAL
1N6383HE3_A/C Vishay Semic... 0.29 $ 1000 TVS DIODE 10V 14.5V 1.5KE
1N6303A-E3/51 Vishay Semic... 0.88 $ 133 TVS DIODE 171V 274V 1.5KE
1N6356 Microsemi Co... 13.28 $ 1000 TVS DIODE 5V 7.5V DO13
1N6302-E3/54 Vishay Semic... 0.0 $ 1000 TVS DIODE 146V 258V 1.5KE
1N6376HE3_A/D Vishay Semic... 0.25 $ 1000 TVS DIODE 12V 16.5V 1.5KE
1N6332US Microsemi Co... 9.68 $ 1000 DIODE ZENER 22V 500MW B-S...
1N6382-E3/54 Vishay Semic... 0.2 $ 1000 TVS DIODE 8V 11.6V 1.5KE
1N6385HE3_A/C Vishay Semic... 0.29 $ 1000 TVS DIODE 15V 21.4V 1.5KE
1N6377G Littelfuse I... 0.0 $ 1000 TVS DIODE 15V 25V AXIAL
1N6380RL4 ON Semicondu... 0.0 $ 1000 TVS DIODE 36V 65.2V AXIAL
1N6351US Microsemi Co... 9.68 $ 1000 ZENER DIODEZener Diode
Latest Products
1N5955BE3/TR13

DIODE ZENER 180V 1.5W DO204ALZener Diode...

1N5955BE3/TR13 Allicdata Electronics
1N5335E3/TR13

DIODE ZENER 3.9V 5W T18Zener Diode 3.9V ...

1N5335E3/TR13 Allicdata Electronics
1N5335E3/TR12

DIODE ZENER 3.9V 5W T18Zener Diode 3.9V ...

1N5335E3/TR12 Allicdata Electronics
1N5335CE3/TR13

DIODE ZENER 3.9V 5W T18Zener Diode 3.9V ...

1N5335CE3/TR13 Allicdata Electronics
1N5335CE3/TR12

DIODE ZENER 3.9V 5W T18Zener Diode 3.9V ...

1N5335CE3/TR12 Allicdata Electronics
1N5335C/TR12

DIODE ZENER 3.9V 5W T18Zener Diode 3.9V ...

1N5335C/TR12 Allicdata Electronics