
Allicdata Part #: | 1N6311US-ND |
Manufacturer Part#: |
1N6311US |
Price: | $ 9.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 3V 500MW B-SQ MELF |
More Detail: | Zener Diode 3V 500mW ±5% Surface Mount B, SQ-MELF |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 8.71528 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Voltage - Zener (Nom) (Vz): | 3V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 29 Ohms |
Current - Reverse Leakage @ Vr: | 30µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | B, SQ-MELF |
Description
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Diodes - Zener - Single - 1N6311US Application Field and Working Principle
The 1N6311US diode is a type of zener diode, and is a single unidirectional (uni directional) device intended to operate in an external circuit as a voltage regulator and to protect against reverse voltages. It is primarily used to protect transistors, integrated circuits, and other delicate electronic components from transient voltage surges and other electrical disturbances during the operation of electronic and communications equipment.The 1N6311US diode is designed for use in applications requiring high voltage protection and noise suppression, such as in broadcast and CATV frequencies, in military communications, and in high-speed telephone systems. The device is manufactured and tested to meet the specifications, including silicon-nitride/silicon-oxide layer and corona reduction requirements, of many leading manufacturers of discrete and hybrid electronic components.Zener diodes are semiconductor devices that are designed to operate as a voltage regulator and to provide protection against transient overvoltages and surges. The 1N6311US diode is a zener diode, with single directionality, having the ability to protect electronics and electrical systems from electrostatic discharge (ESD) and other electrical disturbances, while also introducing a low level of noise into the system.The 1N6311US device is comprised of two layers of doped semiconductor material, each having different electrical properties. The two layers form a junction between them. A zener diode typically operates with a negative bias (reverse bias) applied to its junction. In this condition, with the diode in reverse polarity, the electric field created by the electrical charge stored in the diode is brought close to the junction and a breakdown of the junction barrier occurs, allowing electrons to flow. Therefore, the voltage regulator\'s conduction point is determined by the breakdown voltage of the junction.The conduction point of the 1N6311US device is set at 6.3 volts, which is the breakdown voltage of the junction. By adjusting the external resistance across the junction, any voltage below 6.3 volts can be held to the diode’s terminals. In other words, any voltage applied to the Zener diode will be held at 6.3V, thus functioning as a voltage regulator. The device can be used in voltage suppression applications to absorb energy thus protecting delicate circuits from excessive voltages.The 1N6311US device also contains a layer of silicon nitride in between two layers of doped semiconductor materials. The layer of silicon nitride helps to reduce the amount of corona discharge and thus helps to increase the reliability of the diode.The 1N6311US diode is also used in noise suppression applications, as it limits the amount of voltage spikes, or noise, entering the circuit. This helps to reduce system noise and static, which can interfere with signal transmission and reception. The capacitor can also be adjusted to match a particular signal size to prevent signal interference.In summary, the 1N6311US diode is a single, uni-directional, zener diode designed for use in applications requiring high voltage protection and noise suppression. The diode is comprised of two layers of doped semiconductor material, with a layer of silicon nitride for corona discharge reduction. The device is specified to operate at 6.3V, and is able to protect delicate circuits by suppressing voltage surges and noise, thus providing a reliable solution for many applications.The specific data is subject to PDF, and the above content is for reference
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