1N6383-E3/51 Allicdata Electronics

1N6383-E3/51 Circuit Protection

Allicdata Part #:

1N6383-E3/51-ND

Manufacturer Part#:

1N6383-E3/51

Price: $ 0.41
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 10V 14.5V 1.5KE
More Detail: N/A
DataSheet: 1N6383-E3/51 datasheet1N6383-E3/51 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1500 +: $ 0.36306
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Voltage - Clamping (Max) @ Ipp: 14.5V
Supplier Device Package: 1.5KE
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 90A
Series: TransZorb®
Voltage - Breakdown (Min): 11.7V
Voltage - Reverse Standoff (Typ): 10V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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1N6383-E3/51 TVS Diodes are special purpose diodes that are designed to protect sensitive, high voltage electrical components from damage due to over-voltage transients. The 1N6383-E3/51 TVS Diode can be used in a wide variety of applications, from computers and communications devices to electronic control systems and other high precision electrical equipment.

1N6383-E3/51 Application Field

The main application of 1N6383-E3/51 TVS Diode lies in protecting data and power lines from over-voltage transients, in both direct current (DC) and alternating current (AC) applications. It is ideal for protecting communications networks, control systems, and other sensitive electronics.

1N6383-E3/51 Working Principle

The 1N6383-E3/51 TVS Diode works on the principle of a silicon avalanche diode. When an over-voltage transient causes the voltage on the protected line to exceed the stand-off voltage of the diode, the diode becomes reverse-biased and switches into an avalanche state. In this state, it blocks the excessive voltage, preventing damage to the underlying electrical equipment.

The 1N6383-E3/51 diode is characterized by its stand-off, power, breakdown, and leakage current ratings. The stand-off voltage is the voltage at which the diode switches into its avalanche state. The power rating is the maximum power that the diode can withstand while in its avalanche state. The breakdown voltage is the voltage at which the diode enters an out-of-control current conduction mode, while the leakage current rating is the maximum current that can flow through the diode when it is reverse-biased.

Conclusion

To summarize, 1N6383-E3/51 TVS Diodes are designed to protect sensitive, high voltage electrical components from damage due to over-voltage transients. With its high power, high breakdown, and low leakage current ratings, it is suitable for a wide variety of applications, including computers, communications systems, and other control systems. Its working principle is based on the concept of a silicon avalanche diode, which blocks excessive voltage when it is reverse-biased, thus preventing damage to the underlying electrical equipment.

The specific data is subject to PDF, and the above content is for reference

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