
Allicdata Part #: | 1N6673-ND |
Manufacturer Part#: |
1N6673 |
Price: | $ 96.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RECTIFIER DIODE |
More Detail: | Diode |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 86.83290 |
Series: | * |
Part Status: | Active |
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1N6673 is a commonly used type of rectifier diode which is specifically designed for applications requiring low forward voltage drop and low power dissipation. It belongs to the family of rectifier or protective diodes, which are distinguished by their sharp switching action and low voltage drop when conducting. The 1N6673 diode is a single diode, meaning that its operation is not affected by other portions of a circuit.The 1N6673 diode is designed to be able to withstand up to 1.2 A forward current, with operating current range between 0.2 A to 1.2 A. It is able to withstand up to 400V of reverse voltage with a peak forward voltage of 1.1 V. Its low forward voltage makes it particularly suitable for use in applications requiring low power dissipation. The 1N6673 diode is typically used as a rectifier in low-current power supplies, such as for powering small battery-operated devices. This diode is also used as an over-voltage protection in electrical circuits requiring reliable operation under high transient traction conditions, such as automotive and industrial applications. Additionally, the 1N6673 diode can be used in applications to boost the forward current capability of existing systems.The working principle of the 1N6673 diode is based on diode physics, which states that charge must move through a semiconductor in one direction only. This single-directional movement of charge is facilitated by the ‘p’ and ‘n’ type materials of which most semiconductors are composed. When the anode and cathode of the diode are connected to one another, the charge carriers in the ‘p’ type region of the semiconductor will move towards the cathode, while those in the ‘n’ type region will move towards the anode. This creates a voltage across the semiconductor junction, resulting in current flow in one direction only.In the case of the 1N6673 diode, the low forward voltage drop and low power dissipation make it useful for many applications. Its reverse breakdown voltage, which is typically 400V, ensures that it will not be damaged in the event of an overvoltage. Finally, its sharp switching action allows it to quickly reduce or stop the flow of current in the event of an overcurrent. This makes the 1N6673 diode ideal for applications where reliable operation under high transient traction conditions is required.In summary, the 1N6673 diode is a single, low-power rectifier diode that is capable of withstanding up to 400V of reverse voltage. It is well suited for applications requiring low forward voltage drop, low power dissipation and reliable operation under high transient traction conditions. Its working principle is based on diode physics, and its sharp switching action ensures quick current reduction or stoppage in the event of an overcurrent.
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1N6625E3 | Microsemi Co... | 13.62 $ | 1000 | DIODE GEN PURP 1.1KV 1A A... |
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