Allicdata Part #: | 1N6621US-ND |
Manufacturer Part#: |
1N6621US |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 440V 1.2A A-MELF |
More Detail: | Diode Standard 440V 1.2A Surface Mount A-MELF |
DataSheet: | 1N6621US Datasheet/PDF |
Quantity: | 55 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 440V |
Current - Average Rectified (Io): | 1.2A |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1.2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 500nA @ 440V |
Capacitance @ Vr, F: | 10pF @ 10V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, A |
Supplier Device Package: | A-MELF |
Operating Temperature - Junction: | -65°C ~ 150°C |
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1N6621US Application Field and Working Principle
The 1N6621US rectifier device is widely used for various applications due to its good features such as low forward voltage drop and fast recovery time. It is made by a semiconductor material and is widely used in industrial and automotive installations.
The semiconductor material is typically an organic compound such as polycrystalline silicon (PCS). PCS is a type of silicon semiconductor where the silicon atoms are lined up in a regular pattern. The material has properties similar to other semiconductor materials, including a high electron mobility, low thermal resistivity, low leakage current and low noise.
The 1N6621US rectifier is used in applications where speed and the ability to handle high current is needed. It is suitable for regulating the power supply in an automotive system. It can also be used to provide protection against overvoltage or over-current in industrial and medical equipment.
The working principle of the 1N6621US rectifier is based on the P-N junction diode. A diode is essentially a two-terminal device that controls the flow of current in one direction.
When a voltage is applied across the P-N junction of the diode, a depletion layer is formed. This depletion layer effectively blocks current flow in one direction and the other direction is called forward bias. When the voltage across the diode is reversed, this depletion layer is broken and the diode is reversed biased.
When the diode is reversed biased, it does not conduct current. However, when a certain voltage is applied, the depletion layer decreases and the diode starts to conduct current. The current in the conducting state is limited by the diode’s capacitance and the voltage that can be applied without damaging the diode is called the breakdown voltage.
The 1N6621US rectifier has a fast recovery time, making it suitable for applications requiring high current. In addition, it has a low forward voltage drop, which reduces the power consumed and increases efficiency.
In summary, the 1N6621US rectifier is a widely used device due to its good features such as low forward voltage drop and fast recovery time. It is suitable for regulating the power supply and providing protection against overvoltage or over-current in industrial and medical equipment. The working principle is based on the P-N junction diode and has a fast recovery time and low forward voltage drop.
The specific data is subject to PDF, and the above content is for reference
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1N6675 | Microsemi Co... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 200MA ... |
1N6621US | Microsemi Co... | -- | 55 | DIODE GEN PURP 440V 1.2A ... |
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1N6637 | Microsemi Co... | 10.3 $ | 1000 | DIODE ZENER 5.1V 5W AXIAL... |
1N6637US | Microsemi Co... | 9.65 $ | 1000 | DIODE ZENER 5.1V 5W D5BZe... |
1N6677 | Microsemi Co... | 0.0 $ | 1000 | RECTIFIER DIODEDiode |
1N6677-1 | Microsemi Co... | 3.44 $ | 1000 | RECTIFIER DIODEDiode |
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1N6661 | Microsemi Co... | 5.25 $ | 1000 | RECTIFIER DIODEDiode |
1N6640 | Microsemi Co... | 5.4 $ | 1000 | DIODE GEN PURPOSEDiode |
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