1N957B_T50R Allicdata Electronics
Allicdata Part #:

1N957B_T50R-ND

Manufacturer Part#:

1N957B_T50R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 6.8V 500MW DO35
More Detail: Zener Diode 6.8V 500mW ±5% Through Hole DO-35
DataSheet: 1N957B_T50R datasheet1N957B_T50R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 4.5 Ohms
Current - Reverse Leakage @ Vr: 150µA @ 5.2V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N957
Description

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Diodes are semiconductor devices composed of two elements and a central junction layer between the elements. One element is called the anode, and the other is called the cathode. The current flows through the device from the anode to the cathode when an electric potential is applied to the two leads. The device can be used as a rectifier, which allows the current to flow in one direction only.

The 1N957B T50R is a single Zener diode, specifically a Zener breakdown diode, belonging to the type of diodes called Zener diodes. Zener diodes are special diodes that operate reverse-biased to regulate the voltage levels in a circuit, allowing a precise voltage threshold to be achieved.

The 1N957B T50R diode is the T50R part of the 1N957B series of Zener diodes. It is manufactured by ON Semiconductor and has an apparent maximum of 97 percent. It has a Zener voltage range of 5.1 to 39 volts and a power dissipation of 500 mW.

The 1N957B T50R is mainly used in buffering and voltage regulating applications where high voltage and high power need to be dissipated. It is also used in voltage matching circuits, voltage dividing circuits and power supply design. The diode can also be used for overvoltage protection.

The working principle of a 1N957B T50R diode is based on the Zener breakdown effect, which occurs when the voltage across a reverse-biased diode exceeds a certain value. When the Zener voltage is reached, the diode is said to be in the Zener breakdown region, and current will then circulate between the anode and the cathode. This current is determined by the Zener resistance, and it is responsible for the regulation of the voltage in the circuit.

In the forward-biased region, the diode operates in the same way as any other rectifier diode and is used to allow the flow of current in only one direction. This allows it to protect the circuit from high voltages, while also allowing the regulated voltage levels to remain consistent.

The 1N957B T50R diode is one of the most commonly used Zener breakdown diodes, offering a wide range of Zener voltages and specifying the maximum power dissipation in its electrical characteristics. This diode is used for many different applications, such as voltage regulation, overvoltage protection, voltage matching and high voltage protection.

The specific data is subject to PDF, and the above content is for reference

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