1N957B TR

1N957B TR is a type of diode, categorized under Zener – Single. It is a three-terminal voltage reference device with a reverse breakdown voltage of 9.1 V and high stability. A unique feature of 1N957B TR is its temperature compensated breakdown voltage. It offers superior temperature tracking performance and reliable supply voltage stabilization.The device is manufactured using planar technology, which employs two diffused regions in a silicon chip. The two diffused regions are separated by a P-N junction. This junction acts as a reverse break-down voltage device and is designed to maintain a constant voltage.The device’s terminal configuration is composed of two anode terminals and one cathode terminal. The cathode terminal is the terminal that is connected to the substrate and acts as the reference point. The anode terminals are the two main terminals of the device and deliver power to the circuit. The anode terminal consists of a P-region and a N-region. The N-region is much larger than the P-region.The working principle of 1N957B TR is based on the P-N junction diode. When a negative potential is applied to the P-region, current flows from the anode terminals to the cathode terminal, allowing electrons to flow from the N-region to the P-region and back. This creates an electric field around the junction and a reverse-biased current flows through the diode. When a positive potential is applied to the N-region, the electric field is reversed and it attracts the electrons back to the N-region, thus creating a forward-biased current flow.The reverse breakdown voltage of 1N957B TR is carefully calibrated, using a process known as temperature stabilization. This ensures that the breakdown voltage remains constant, regardless of temperature variation.The applications of 1N957B TR include voltage regulation, ripple suppression, over-voltage protection and current stabilization in various electronic equipment. It can also be used in battery powered systems to proper voltage regulation under varying load conditions.1N957B TR is a reliable and robust solution for voltage stabilisation, ripple suppression and other voltage regulation applications. Its superior temperature tracking performance and high stability make it the ideal device for a number of applications.

1N959B TR	Central Semi...	0.06 $	1000	DIODE ZENER 8.2V 500MW DO...
1N958BTR	ON Semicondu...	0.0 $	1000	DIODE ZENER 7.5V 500MW DO...
1N958B_T50R	ON Semicondu...	0.0 $	1000	DIODE ZENER 7.5V 500MW DO...
1N957B TR	Central Semi...	0.06 $	1000	DIODE ZENER 6.8V 500MW DO...
1N958B TR	Central Semi...	0.06 $	1000	DIODE ZENER 7.5V 500MW DO...
1N957A	Microsemi Co...	1.5 $	1000	DIODE ZENER 6.8V 500MW DO...
1N959BE3	Microsemi Co...	0.0 $	1000	DIODE ZENER 8.2V 500MW DO...
1N957B BK	Central Semi...	0.06 $	1000	DIODE ZENER 6.8V 500MW DO...
1N959B	Microsemi Co...	1.5 $	1000	ZENER DIODEZener Diode
1N958B BK	Central Semi...	0.06 $	1000	DIODE ZENER 7.5V 500MW DO...
1N957B_T50A	ON Semicondu...	0.0 $	1000	DIODE ZENER 6.8V 500MW DO...
1N959B_T50R	ON Semicondu...	0.0 $	1000	DIODE ZENER 8.2V 500MW DO...
1N957B	Microsemi Co...	2.24 $	448	DIODE ZENER 6.8V 500MW DO...
1N957B_T50R	ON Semicondu...	0.0 $	1000	DIODE ZENER 6.8V 500MW DO...
1N959B BK	Central Semi...	0.06 $	1000	DIODE ZENER 8.2V 500MW DO...
1N958B_T50A	ON Semicondu...	0.0 $	1000	DIODE ZENER 7.5V 500MW DO...
1N959B_T50A	ON Semicondu...	0.0 $	1000	DIODE ZENER 8.2V 500MW DO...
1N958B	Microsemi Co...	1.69 $	1000	ZENER DIODEZener Diode
1N959BTR	ON Semicondu...	0.0 $	1000	DIODE ZENER 8.2V 500MW DO...