
Allicdata Part #: | 1N973BTR-ND |
Manufacturer Part#: |
1N973BTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 33V 500MW DO35 |
More Detail: | Zener Diode 33V 500mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 58 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 25.1V |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N973 |
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1N973BTR Application Field and Working Principle
The 1N973BTR is a single zener diode designed to provide protection against overvoltage that can cause device damage or failure. The 1N973BTR is often used in voltage regulation, surge protection, and signal isolation applications. It is available in both axial and surface mount packages, making it ideal for a wide range of applications.
Structure and Components
The 1N973BTR consist of a silicon diode with a uniform junction structure. The active region of the diode is semiconductor material with a band-gap energy which is higher than that of the surrounding material. As well as the p-type and n-type regions of silicon. It also contains four contacts, one for the anode, one for the cathode and two more for the mounting of the diode. The active region is formed by either a junction or an epitaxial layer.
Principle of Operation
The 1N973BTR operates on a principle known as "reverse breakdown". As current is applied to the diode, the potential across the diode\'s active region increases. When a voltage reaches the "breakdown voltage" of the diode, it allows an increased current to flow in the opposite direction, creating a low-impedance path. This effectively "shorts out" the voltage, stopping further increases in the potential.
The reverse breakdown voltage of the 1N973BTR is adjustable by varying the level of current applied to the diode. The breakdown voltage can be set to any value within the forward voltage drop of the diode. This makes the 1N973BTR suitable for voltage regulation applications, where the output voltage needs to be precisely regulated.
Applications
The 1N973BTR can be used in a variety of applications, such as voltage regulation or surge protection. It is ideal for applications where a precise output voltage is required, such as in linear power supplies.
The 1N973BTR is also well-suited for use in motor controllers, load sharing systems and UPS (uninterruptible power supplies). It is robust and reliable, making it ideal for critical systems where the failure of a component is undesirable.
The 1N973BTR is also used in signal isolation and noise suppression applications, where the diode is used to minimize interference between signals. By providing a low-impedance path for high-frequency interference, the 1N973BTR can reduce electrical noise and improve signal integrity.
Conclusion
The 1N973BTR is a single zener diode designed to provide protection against overvoltage. It can be used in voltage regulation, surge protection and signal isolation applications. It is available in both axial and surface mount packages, making it ideal for a wide range of applications. With its adjustable reverse breakdown voltage, it is well-suited for applications where a precise output voltage is required.
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1N973B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 33V 500MW DO3... |
1N977B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 47V 500MW DO3... |
1N974B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 36V 500MW DO3... |
1N979B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 56V 500MW DO3... |
1N971B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 27V 500MW DO3... |
1N977B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 47V 500MW DO3... |
1N977B | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 47V 500MW DO7... |
1N973A | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 33V 500MW DO7... |
1N971B | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 27V 500MW DO7... |
1N978B BK | Central Semi... | 0.06 $ | 1000 | DIODE ZENER 51V 500MW DO3... |
1N974A | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 36V 500MW DO7... |
1N974B | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 36V 500MW DO7... |
1N979A | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 56V 500MW DO7... |
1N974B BK | Central Semi... | 0.06 $ | 1000 | DIODE ZENER 36V 500MW DO3... |
1N978B TR | Central Semi... | 0.06 $ | 1000 | DIODE ZENER 51V 500MW DO3... |
1N975B | Microsemi Co... | 2.24 $ | 27 | DIODE ZENER 39V 500MW DO7... |
1N970B TR | Central Semi... | 0.06 $ | 1000 | DIODE ZENER 24V 500MW DO3... |
1N975B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 39V 500MW DO3... |
1N978A | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 51V 500MW DO7... |
1N975B TR | Central Semi... | 0.06 $ | 1000 | DIODE ZENER 39V 500MW DO3... |
1N978B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 51V 500MW DO3... |
1N972B | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 30V 500MW DO3... |
1N979B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 56V 500MW DO3... |
1N972A | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 30V 500MW DO7... |
1N976A | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 43V 500MW DO7... |
1N971B TR | Central Semi... | 0.06 $ | 1000 | DIODE ZENER 27V 500MW DO3... |
1N975A | Microsemi Co... | 1.5 $ | 1000 | DIODE ZENER 39V 500MW DO7... |
1N972BTR | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 30V 500MW DO3... |
1N970BTR | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 24V 500MW DO3... |
1N973B | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 33V 500MW DO3... |
1N975B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 39V 500MW DO3... |
1N974B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 36V 500MW DO3... |
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