1N976A

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	43V
Tolerance:	±10%
Power - Max:	500mW
Impedance (Max) (Zzt):	93 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 32.7V
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	DO-204AA, DO-7, Axial
Supplier Device Package:	DO-7

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1N976A is a single Zener diode, also known as a voltage regulator diode. It is a small, easily recognizable, two-terminal electronic component that can control the flow of electrical current in one direction. The device has a breakdown voltage rating and is often used for voltage stabilization, as it can regulate either a high or a low voltage. It can also prevent the reverse flow of current and manage the voltage drop in a circuit to help reduce losses and ensure consistent current.
The design and fabrication of 1N976A are based on a pool of doped layers formed on a semi-insulating substrate. It is designed with a thicker cathode region than the anode region. The semi-insulating substrate is formed with a general layer of on doped region in the P type substrate. On the backside of the wafer is the N-Epitaxial Layer. The cathode is the positively charged region and the anode is the negatively charged region.
1N976A is typically used for voltage regulation or for a voltage reference in the application of power supply lines. It can also be used to maintain the voltage across a load, such as LEDs, so that the device does not get damaged from overvoltage. Furthermore, it can be used to protect semiconductor devices from overvoltage by placing it in the application circuit. The diode can limit the maximum amount of voltage available to the circuit by setting up a voltage protection level.
The 1N976A works with two basic principles. The first principle is known as the Zener breakdown effect. When the Zener diode is placed in an opposing current, an electric field appears and causes a current surge that is transferred from the cathode to the anode when the breakdown point is reached. This process boosts the voltage from anode to cathode, thus protecting the device from the immense voltage surge.
The second principle is known as Avalanche Breakdown. This phenomenon occurs when a large concentration of carriers is created in the depletion region of the semiconductor material. It can produce a situation in which the carrier concentration is so high that it begins to drift across the semiconductor material and releases a large amount of energy. This phenomenon is mainly responsible for bringing down the voltage in the avalanche breakdown mode.
When current flows in the 1N976A, the voltage drop across the diode is kept at a steady level. This means that any sudden increase or decrease in voltage will not cause much of a fluctuation in the voltage drop across the device. This steady-state voltage drop is maintained by the Zener and Avalanche breakdowns which helps to protect the device from any excess voltage.
1N976A is an effective solution for regulating the voltage in a circuit and protecting electronic devices from overvoltage. It is a small, easily recognizable, two-terminal electronic component that can control the flow of electrical current in one direction. Its Zener and avalanche breakdowns are effective in protecting a device from overvoltage and in keeping a steady voltage drop across the device. Overall, 1N976A is an important device for voltage regulation and voltage stabilization for a wide range of applications.

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