1N991BUR-1 Allicdata Electronics
Allicdata Part #:

1N991BUR-1-ND

Manufacturer Part#:

1N991BUR-1

Price: $ 9.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: ZENER DIODE
More Detail: Zener Diode
DataSheet: 1N991BUR-1 datasheet1N991BUR-1 Datasheet/PDF
Quantity: 1000
100 +: $ 8.46790
Stock 1000Can Ship Immediately
$ 9.41
Specifications
Series: *
Part Status: Active
Description

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Introduction

1N991BUR-1 is a type of general-purpose signal diode and it\'s classified as single Zener diode. It contains a high-purity silicon junction, enabling it to offer considerable voltage regulation and thermally stable characteristics.This diode is known for excellent reverse power dissipation and high stability, making it suitable for high reliability applications. The package contains a terminal set consisting of two stainless steel lugs, the red one for positive voltage and black for the negative voltage.

Application Field and Working Principle

1N991BUR-1 is suitable for applications requiring a low-cost voltage regulator, such as voltage regulation of wires or circuits, across the temperature range from -55°C to +150°C. It is suitable as a general-purpose signal diode in applications such as clamping, noise-filtering, and reverse-current protection. The working principle of this diode is that, when the device is forward biased, electrons drift from the cathode to the anode and holes drift in the opposite direction, allowing current to flow through the junction and allowing a voltage drop in the forward direction. The voltage drop is caused by the depletion region in the junction, which is created due to the difference of concentrations of donor and acceptor species in the silicon. In reverse bias, the voltage drop across the junction is higher than the forward bias, due to the high potential barrier created which discourages current flow. In the working of 1N991BUR-1, the Zener effect is exploited to allow voltage regulation and protection from excessive voltage in the forward biased orientation. The Zener effect is based on the creation of a reversed breakdown voltage in the junction due to the high electric field created when the reverse bias exceeds a certain threshold. This causes releasing of a large number of charge carriers, resulting in a small, but still relatively constant, amount of current flow. This current allows a stable, regulated voltage across the junction, regardless of input voltage or temperature variations. This voltage can be adjusted by adjusting the reverse bias voltage, allowing them to be used as adjustable voltage regulators. The 1N991BUR-1 is a popular choice for low-noise and low-cost Zener diode applications.

Conclusion

1N991BUR-1 is a single Zener diode suitable for applications requiring a low-cost voltage regulator, such as voltage regulation of wires or circuits, across the temperature range from -55°C to +150°C. It contains a high-purity silicon junction and is capable of providing excellent reverse power dissipation and high stability. It is also known for its low-noise and low-cost Zener diode applications. The Zener effect is exploited to allow voltage regulation and protection from excessive voltage in the forward biased orientation.

The specific data is subject to PDF, and the above content is for reference

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