| Allicdata Part #: | 1PGSMA4747R3GTR-ND |
| Manufacturer Part#: |
1PGSMA4747 R3G |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER |
| More Detail: | Zener Diode 20V 1.25W ±5% Surface Mount DO-214AC (... |
| DataSheet: |  1PGSMA4747 R3G Datasheet/PDF |
| Quantity: | 1000 |
| 1800 +: | $ 0.07594 |
| 3600 +: | $ 0.06835 |
| 5400 +: | $ 0.06455 |
| 12600 +: | $ 0.05885 |
| 45000 +: | $ 0.05506 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 20V |
| Tolerance: | ±5% |
| Power - Max: | 1.25W |
| Impedance (Max) (Zzt): | 22 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 15.2V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMA) |
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< html >< head >< title >< body >The 1PGSMA4747 R3G is a single Zener type diode that can be used in a variety of applications. It is designed to be used in both commercial and industrial settings, and is ideal for applications such as reverse-polarity protection, over-voltage protection, and reverse current prevention.
The diode works by utilizing a Zener breakdown structure, which allows for a reverse-bias voltage to be applied to the diode. When this voltage reaches a certain threshold, known as the Zener voltage, the diode begins to conduct current and act as a rectifier. This means that when a reverse-bias voltage is applied, the diode will become a conductor and allow for current to flow through it.
The 1PGSMA4747 R3G also features a high-temperature operating performance, meaning that it is able to operate in a wide range of temperatures without suffering from any performance degradation. This makes it ideal for applications where temperature variations are likely to occur. It also has a symmetrical forward and reverse current ratings, meaning that it is capable of performing well in applications with frequent voltage changes.
The 1PGSMA4747 R3G is also designed for high reliability and is constructed with metal-oxide-semiconductor (MOS) technology. This provides the diode with increased reliability due to its ability to reduce breakdown voltage, leakage current, and capacitance. Additionally, the diode has a low forward voltage drop, making it a great choice for applications such as over-voltage protection and reverse-polarity protection.
In conclusion, the 1PGSMA4747 R3G diode is a great choice for many different applications due to its high-performance and reliability. Its Zener breakdown structure gives it the ability to provide reverse-bias voltage protection, over-voltage protection, and reverse current prevention, making it a great choice for a variety of industrial and commercial applications. Additionally, its metal-oxide-semiconductor construction makes it reliable and highly resistant to temperature changes.