| Allicdata Part #: | 1PGSMB5927R5GTR-ND |
| Manufacturer Part#: |
1PGSMB5927 R5G |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER 12V 3W DO214AA |
| More Detail: | Zener Diode 12V 3W ±5% Surface Mount DO-214AA (SMB... |
| DataSheet: | 1PGSMB5927 R5G Datasheet/PDF |
| Quantity: | 850 |
| 850 +: | $ 0.11928 |
| 1700 +: | $ 0.10672 |
| 2550 +: | $ 0.09730 |
| 5950 +: | $ 0.09103 |
| 21250 +: | $ 0.08475 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 12V |
| Tolerance: | ±5% |
| Power - Max: | 3W |
| Impedance (Max) (Zzt): | 6.5 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 9.1V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | DO-214AA (SMB) |
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1PGSMB5927 R5G is an ultra-low reverse zener diode specifically designed for telecom applications. Characterized by low reverse leakage and low forward current, 1PGSMB5927 R5G is excellent for protecting sensitive equipment from voltage transients. The device can be used as a voltage reference in applications such as current limited power supplies, battery protection, and telecommunications.
The device is a single chip package that is available in two different reverse device breakdowns, 5V (1PGSMB5927 R5G) or 10V (1PGSMB5927 R10G). It is fabricated using single chip or multi-die technology combined with high reliability thin film passivation techniques. The device features a low trigger voltage, low forward current and ultra low reverse leakage, enabling low power consuming protection against voltage transients. The device can be used in applications up to a maximum junction temperature of +150°C. The device has an ultra-low reverse leakage at temperatures between -55°C and +125°C and a maximum of 50nA at 10V.
Working Principle:When the voltage at the Zener diode is increased, the electric current through the diode increases exponentially. This current provides additional heat to the diode which in turn increases its temperature. As the temperature increase, the forward voltage of the diode decreases which allows for more current to flow through the diode and hence increases the reverse voltage of the diode. Eventually the reverse voltage will reach the Zener voltage of the diode at which point the voltage will remain constant, even when the external voltage continuously increases. The diode will act as a voltage clamp, dissipating any excess energy and preventing the voltage from going any higher than the Zener voltage.
Application fields:1PGSMB5927 R5G can be used in various applications such as telecommunications, power supplies, and battery protection. It is also suitable for protecting sensitive equipment and appliances against voltage transients due to its low trigger voltage and ultra-low reverse leakage. They are commonly used in voltage regulation circuits and boost converters, as well as in automotive electronics. The device can also be used as a safety element in communication lines, providing quick response time to interrupt the line whenever an overvoltage event is detected. Additionally, the device is suitable for applications with low power consumption.
The specific data is subject to PDF, and the above content is for reference
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1PGSMB5927 R5G Datasheet/PDF