1PMT4106C/TR13

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The 1PMT4106C/TR13 is a single, Zener diode specifically designed for usage in larger consumer and industrial applications. The device is rated for 25-volt Zener and a 0.4-amp nominal current for both forward and reverse currents. The device can also be used in many medical applications, as it is UL standard approved. The device features a high-voltage ESD rating, a Cathode indicator and a high-speed avalanche-rated construction.

The wide range of operating temperature (from - 65 C to +175 C) and the low-temperature coefficient make the 1PMT4106C/TR13 an attractive solution for applications where temperature stability and accuracy is important. Its high-performance voltage-stabilizing design allows for a variety of power conditioning applications, such as LED drive, LED/DC motor speed control and other devices requiring regulation of input voltage.

The 1PMT4106C/TR13 features a unique construction and a low-resistance Silicon body that provide high-temperature endurance and uniform breakdown performance, while still meeting the ESD performance and reliability requirements of industrial and high-end consumer markets.

The ultra-fast reverse-recovery characteristic of the 1PMT4106C/TR13 ensures that the device has no overshoot or peak offsets, making it highly suitable for large current pulse-switching applications. It also reduces the loss of energy during transient voltage fluctuations, and provides superior performance in terms of power handling and efficiency.

The device\'s low-resistance Silicon body ensures fast reverse-recovery time and suitable for large-signal switching applications. The device also features a high-voltage Cathode indicator to show the status of the Zener diode and is available in RoHS-compliant packages for both through-hole and surface-mount applications.

The working principle of the 1PMT4106C/TR13 is simple; when a reverse voltage is applied, the diode provides a low-resistance path for the current. The Zener breakdown voltage is established due to the internal electric field created between the semiconductor junction, resulting in a constant voltage drop across the device during operation. The device also has a built-in safety feature that protects it from overvoltage in case of an unpredictable change in current or in external conditions.

Overall, the 1PMT4106C/TR13 is an ideal component for a variety of power-conditioning applications and provides excellent ESD, temperature and voltage stability due to its well-designed construction. Its robust performance and superior efficiency make it a suitable choice for medium and large-scale applications. Furthermore, its wide range of temperature operating range and low-temperature coefficient make it a suitable solution for applications where temperature stability and accuracy is essential.

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