1PMT5920BT1G Allicdata Electronics
Allicdata Part #:

1PMT5920BT1GOSTR-ND

Manufacturer Part#:

1PMT5920BT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 6.2V 500MW POWERMITE
More Detail: Zener Diode 6.2V 500mW ±5% Surface Mount Powermite
DataSheet: 1PMT5920BT1G datasheet1PMT5920BT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 2 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 4V
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Base Part Number: 1PMT5920
Description

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Diodes, also known as rectifiers, are an essential type of electronic component responsible for carrying current in one direction. Zener diodes, a subset of diodes, are a specific type of diode that make use of Zener breakdown, which can provide reverse bias protection, voltage regulation, referencing, switching and more. One type of Zener diode is the 1PMT5920BT1G, a single device designed with a wide range of applications and a variety of working principles.

The 1PMT5920BT1G is designed as a surface mount device, which makes it ideal for use in a variety of applications. Its primary use is as a Zener diode rectifier, used to protect other components in electronic circuits from dangerously high levels of reverse bias due to induced voltages or current pulses. These rectifiers can also be used for a variety of other tasks, such as providing a consistent reference voltage for comparators, switching circuits, and other sensitive devices that require a regulated input voltage. The 1PMT5920BT1G also has the added ability to dissipate a higher amount of power than other similar components.

The 1PMT5920BT1G utilizes a variety of working principles to provide protection and regulation. Its Zener breakdown junction relies on a depletion of charge carriers in a reverse biased pn junction, resulting in a fall in voltage as the current rises to a certain point. In addition, the 1PMT5920BT1G features an abrasive breakdown mechanism to ensure consistent voltage levels. This ensures that the voltage across the diode remains roughly the same regardless of current. Finally, the 1PMT5920BT1G features a Lightly Doped Drain (LDD) diode, which enables the diode to conduct current more efficiently and dissipate power more effectively.

Overall, the 1PMT5920BT1G is a single Zener diode device designed for a variety of applications. Its Zener breakdown junction provides reverse bias protection, while its abrasive breakdown mechanism and LDD diode provide voltage regulation, referencing, switching, and more. As its robust design allows it to dissipate a higher amount of power than other similar components, the 1PMT5920BT1G is an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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