Allicdata Part #: | 1PMT5927BT1GOSTR-ND |
Manufacturer Part#: |
1PMT5927BT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 12V 3.2W POWERMITE |
More Detail: | Zener Diode 12V 3.2W ±5% Surface Mount Powermite |
DataSheet: | 1PMT5927BT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±5% |
Power - Max: | 3.2W |
Impedance (Max) (Zzt): | 6.5 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 9.1V |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | Powermite |
Base Part Number: | 1PMT5927 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1PMT5927BT1G, classified as a single Zener Diode, is an essential component used in various applications and industries due to its many useful features. Equipped with a working principle that utilizes an avalanche effect and breakdown effect to regulate current and voltage, 1PMT5927BT1G is often used in voltage regulation, voltage reference and other fields. Due to its high voltage rating and low capacitance, the 1PMT5927BT1G is particularly attractive for integrated circuit protection and overvoltage protection applications.
The 1PMT5927BT1G takes advantage of the Zener breakdown effect. This phenomenon can be created when a high electric field is applied to a junction. As applied voltages increase, electrons and holes are driven to the junction. If there is sufficient electric field present, this will create an avalanche of electrons and ions that further diminishes the electric field build up. When the electric field is reduced, the current through the device will be reduced and, provided that the reverse voltage was below breakdown, no further current will flow.
The 1PMT5927BT1G also takes advantage of an avalanche effect. The avalanche effect occurs when a junction has an applied reverse voltage across it that is between the Zener breakdown voltage and the avalanche breakdown voltage. This results in the complete breakdown of the junction, making aconductive path for current to flow. This current flow will increase with even a slight change in the applied voltage, due to the avalanche effect. This makes the 1PMT5927BT1G ideal for voltage regulation and voltage reference applications.
The 1PMT5927BT1G can be used in consumer electronics, automotive applications, industrial equipment and medical equipment. It is often used in battery chargers, switching supplies, instrumentation circuits, alarm systems, AC adapters and more. 1PMT5927BT1G is equipped with a high voltage rating, low capacitance and low leakage current, making it an ideal choice for many integrated circuit protection and overvoltage protection applications.
The 1PMT5927BT1G is a single Zener diode specially designed for high-precision voltage regulation and voltage splitting applications. It takes advantage of the Zener breakdown effect, as well as the avalanche breakdown effect, to effectively regulate and protect circuits from overvoltage. Its many features make it an attractive component for consumer electronics, automotive applications, industrial equipment and medical equipment.
The specific data is subject to PDF, and the above content is for reference
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