Allicdata Part #: | 1PMT5916B/TR7-ND |
Manufacturer Part#: |
1PMT5916B/TR7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 4.3V 3W DO216AA |
More Detail: | Zener Diode 4.3V 3W ±5% Surface Mount DO-216AA |
DataSheet: | 1PMT5916B/TR7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 4.3V |
Tolerance: | ±5% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 6 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | DO-216AA |
Base Part Number: | 1PMT5916 |
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Diodes are semiconductor devices that act as one-way valves for electrons. Zener diodes are specially designed diodes that have the ability to break down at a predetermined voltage, the "Zener voltage" and allow current to flow in the opposite direction. The 1PMT5916B/TR7 is a single Zener diode intended for use in a variety of electronic applications.
The 1PMT5916B/TR7 has a Zener voltage range of 4.7 V ± 5% with an operating temperature range from -55 °C to +125 °C. The maximum permissible power dissipation is 0.25 W, and the maximum applied peak reverse voltage is 4.0 V. Other features of this diode include a low leakage current and a low reverse recovery time of 10 ns.
The 1PMT5916B/TR7\'s primary application is in logic level shifting and required voltage clamping in logic circuits. It is capable of providing voltage desensitization in order to protect sensitive components from electrical transients. In automotive and consumer electronics, it is often used to regulate the 12V supply on a given circuit. It can be employed in the power up/down electronic circuitry of a battery-powered device for the purpose of power-on reset (POR) and power-off reset (POF).
The working principle of the 1PMT5916B/TR7 is based on the Zener effect in which a high reverse voltage causes electrons to be excited from the conduction bands of a semiconductor material. This will create a high concentration of holes and electrons near the junction, which, in turn, will create a high electric field. Due to the high electric field, the electrons in the conduction band will be pushed into the reverse direction. As the electrons flow in the reverse direction, a voltage drop across the junction is created. This voltage drop can be used to regulate the voltage applied to the resistor.
The 1PMT5916B/TR7 is capable of performing reliably at high temperatures and high Zener voltage, making it suitable for a variety of applications. In addition, its low leakage current, low reverse recovery time and high peak reverse voltage ensure that it can provide reliable and efficient performance for many years. The 1PMT5916B/TR7 is an ideal choice for those seeking a reliable and efficient Zener diode.
The specific data is subject to PDF, and the above content is for reference
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