1PMT5917BE3/TR13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	4.7V
Tolerance:	±5%
Power - Max:	3W
Impedance (Max) (Zzt):	5 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 1.5V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	DO-216AA
Supplier Device Package:	DO-216AA
Base Part Number:	1PMT5917

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Introduction

1PMT5917BE3/TR13 is a 3-terminal zener diode widely used for general purpose rectification, ESD protection, and variac protection applications. It is the single package of Zener diode from the 1PMT5917BE3 series. Generally, the Zener diode rectifies signals across the junction due to their reverse biased function. This diode is also used for ESD protection for its capability of breaking down at a specified voltage.

Application Field

This Zener diode is suitable for general purpose rectification and ESD protection, and variac protection applications. The 1PMT5917BE3/TR13 provides improved reverse breakdown characteristics and tight tolerance. As a result, it increases the current limitation and provides a much better surge power capability. The diode is suitable for automotive, computing, and telecommunication system applications where reverse voltage protection, as well as ESD protection, is needed. It has a limit breakdown voltage of 27.5V through up to 600V, enabling it to be used in wide-range applications.

Working Principle

1PMT5917BE3/TR13 is a Zener diode functioning under reverse-biased configuration to limit the reverse breakdown voltage and enable component protection. The diode is capable of withstanding the surge voltage with low parasitic capacitance and series resistance. When used in the forward-biased configuration, the diode acts effectively for current rectification and allows components to function without any damage caused by continuous voltages. The breakdown voltage for the diode is determined by the P/N junction width and the doping concentration. When the voltage is greater than the reverse breakdown voltage, the electrons near the junction will be accelerated and gain enough energy to penetrate the energy barrier between the valence and conduction band, thus creating electron-hole pairs while the Zener avalanche effect occurs. As a result, the designed breakdown voltage will be formed on the diode.

Conclusion

The 1PMT5917BE3/TR13 is a single package of Zener diode with wide application range and a 27.5V to 600V operating limit. It is suitable for ESD protection, reverse voltage protection, and other general purpose protections such as variac protection. During operation, the Zener diode is capable of withstanding the surge voltage and provides a low parasitic capacitance and series resistance. Furthermore, the diode functions under the reverse-biased configuration to determine the reverse breakdown voltage and forward-biased configuration for current rectification.

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