Allicdata Part #: | 1PMT5917CE3/TR7-ND |
Manufacturer Part#: |
1PMT5917CE3/TR7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 4.7V 3W DO216AA |
More Detail: | Zener Diode 4.7V 3W ±2% Surface Mount DO-216AA |
DataSheet: | 1PMT5917CE3/TR7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 4.7V |
Tolerance: | ±2% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 5 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1.5V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | DO-216AA |
Base Part Number: | 1PMT5917 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.```htmlDiodes - Zener - Single
The 1PMT5917CE3/TR7 is a single Zener diode manufactured by NXP. It utilizes a state-of-the-art high ESD protection system and offers unsurpassed performance in applications requiring protection from transients and static discharges. The device offers an extremely low leakage current and minimizes the risk of ESD damage in its intended applications.
A Zener diode is a special kind of diode that permits current to flow both forward and reverse in a controlled manner. It acts like a regular diode in that it will block the reversed current, preventing it to go ‘backwards’. However, when the applied voltage is higher than the Zener breakdown voltage, Vz, reverse current will flow. This current is limited by the Zener impedance, Zz.
The 1PMT5917CE3/TR7 is applicable for a wide range of applications, such as ESD protection for FPGA, MCU, and DSP integrated circuits, switch mode power supplies, and data lines of various types of digital and analog communication systems.
Working Principle
The 1PMT5917CE3/TR7 operates on the principle of reverse-biased Avalanche Breakdown. A Zener diode is a P-N junction diode with a modified doping profile which allows the diode to operate in reverse bias region. When a voltage higher than the Zener breakdown voltage (Vz) is applied to the diode in reverse bias, then a large electric field is developed across the junction and current begins to flow. This current is limited by the Zener impedance (Zz).
The 1PMT5917CE3/TR7 provides ESD protection against both electrostatic discharge (ESD) and electrical fast transients (EFT), due to its low breakdown voltage and low leakage current. When a voltage higher than the Zener breakdown voltage is applied to the diode, the increased electron and hole concentration at the junction creates an avalanche effect, resulting in a high current ‘clamp’ that helps alleviate the voltage surge. This is what provides the ESD protection.
The 1PMT5917CE3/TR7 is an extremely reliable and robust device, offering superior ESD protection in a wide range of applications. It is suitable for use in a wide range of power supplies, data lines and communication systems. In addition, it is a cost effective and reliable solution that offers protection against both electrostatic and electrical fast transient events.
The 1PMT5917CE3/TR7 is an excellent choice for applications requiring superior ESD protection, excellent performance, and reliability. It is a cost-effective solution that provides robust ESD protection in a small form factor.
```The specific data is subject to PDF, and the above content is for reference
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