Allicdata Part #: | 1PMT5919BE3/TR13-ND |
Manufacturer Part#: |
1PMT5919BE3/TR13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 5.6V 3W DO216AA |
More Detail: | Zener Diode 5.6V 3W ±5% Surface Mount DO-216AA |
DataSheet: | 1PMT5919BE3/TR13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±5% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 2 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 3V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | DO-216AA |
Base Part Number: | 1PMT5919 |
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Diodes - Zener - Single: 1PMT5919BE3/TR13 application field and working principle
The 1PMT5919BE3/TR13 is a single zener diode manufactured by NXP Semiconductors. It has low leakage current, good avalanche characteristics and a low zener impedance. The device is encapuslated in a SOD-323 package which is a small and surface mounting package, ideal for high density layouts.
Application field
The 1PMT5919BE3/TR13 is designed for general purpose applications, such as surge and transient protection in automotive and industrial applications, or as a voltage clamp, ESD protection and over-voltage protection for products with low power electronics. It can also be used in LED lighting solutions and other portable applications where small low zener impedance zener diodes are needed.
Working Principle
The Zener diode works in reverse bias, allowing current to flow in the reverse direction when a sufficient voltage is applied. The breakdown voltage, also known as Zener voltage, is the voltage at which the diode begins allowing current to flow in the reverse direction. This is the point at which the diode begins to conduct in reverse, allowing the current to be regulated and regulated voltage outputted. The various materials and junctions used in the manufacture of the diode determines the breakdown voltage.
The 1PMT5919BE3/TR13 has a breakdown voltage of 5.9V, which allows it to be used in applications requiring a regulated voltage of 5.9V or below. It has a low leakage current, good avalanche characteristics and a low zener impedance, making it a viable choice for applications requiring regulated voltage output.
Conclusion
The 1PMT5919BE3/TR13 Zener diode from NXP Semiconductors is a low leakage current, low zener impedance device encapasulated in a SOD-323 package. It is designed for general purpose applications, such as surge and transient protection in automotive and industrial applications, or as a voltage clamp, ESD protection and over-voltage protection for products with low power electronics. The 1PMT5919BE3/TR13 has a breakdown voltage of 5.9V, which allows it to be used in applications requiring a regulated voltage of 5.9V or below.
The specific data is subject to PDF, and the above content is for reference
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