1PMT5922B/TR7 Allicdata Electronics
Allicdata Part #:

1PMT5922B/TR7-ND

Manufacturer Part#:

1PMT5922B/TR7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 7.5V 3W DO216AA
More Detail: Zener Diode 7.5V 3W ±5% Surface Mount DO-216AA
DataSheet: 1PMT5922B/TR7 datasheet1PMT5922B/TR7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 3 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216AA
Base Part Number: 1PMT5922
Description

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The 1PMT5922B/TR7 diode is a type of single zener diode, which has a wide range of applications and works on the principle of zener breakdown.

A zener diode is a type of diode which has a highly doped p-n junction and is reverse biased. When a reverse bias voltage is applied to this junction, it begins to conduct current. This is known as a “zener effect”, in which current flows at a steady rate even when the voltage is increased further. This makes it ideal for use in power supplies, communications equipment, and automotive electronics, among other applications.

The 1PMT5922B/TR7 diode is a single-zener diode which is designed to be operated at the breakdown voltage of 5.92 V. This diode is designed specifically for use in power supplies, signal rectification, and voltage regulation. It has a maximum power dissipation of 750 mW, a forward voltage drop of 1.2 V, and a peak forward surge current of 600 mA.

The working principle of 1PMT5922B/TR7 is based on zener breakdown. When the reverse bias voltage applied to the diode exceeds its breakdown voltage, the diode begins to conduct current. This is known as the zener effect. The breakdown voltage is determined by the doping concentration of the p-n junction and is typically around 5.92 V. This diode is designed to handle up to the maximum power dissipation rating of 750 mW.

The 1PMT5922B/TR7 diode has a wide range of applications due to its versatile design. It can be used in power supplies, signal rectification, voltage regulation, automotive electronics, and communications equipment. It is also used in DC-DC converters, invertors, and battery chargers.

In summary, the 1PMT5922B/TR7 diode is a single zener diode which is designed to work at a breakdown voltage of 5.92V. It has a maximum power dissipation of 750 mW and a peak forward surge current of 600 mA. It has a wide range of applications due to its versatile design, such as in power supplies, signal rectification, voltage regulation, automotive electronics, and communications equipment. The working principle of this diode is based on zener breakdown, in which the current flows steadily at a rate determined by the breakdown voltage.

The specific data is subject to PDF, and the above content is for reference

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