Allicdata Part #: | 1PMT5922BE3/TR13-ND |
Manufacturer Part#: |
1PMT5922BE3/TR13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 7.5V 3W DO216AA |
More Detail: | Zener Diode 7.5V 3W ±5% Surface Mount DO-216AA |
DataSheet: | 1PMT5922BE3/TR13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 7.5V |
Tolerance: | ±5% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 3 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 6V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | DO-216AA |
Base Part Number: | 1PMT5922 |
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The device 1PMT5922BE3/TR13 is a single zener diode specifically used to regulate low voltages to a steady, consistent output. This diode is ideal for voltage stabilizing applications and provides reliable performance in both linear and switching power supplies. It operates in a wide range of temperatures, and its low thermal resistance makes it suitable for a variety of applications.
The 1PMT5922BE3/TR13 is an epitaxial planar silicon zener diode with a nominal breakdown voltage of 27 volts. It is a small, surface mount component with an operating range from -55°C to +200°C and a storage temperature range from -55°C to +150°C. It features a low thermal resistance of 40 mW/K and a maximum zener impedance of 50 Ω at its rated operating temperature. The diode also has a small package size of 1.2 x 0.6mm, making it suitable for board-level applications.
The primary application of the 1PMT5922BE3/TR13 is voltage regulation. It provides a steady output voltage, even under varying input voltages, by clamped it in a range between its rated breakdown voltage and its rated reverse current. The rate at which the voltage is regulated depends on the device’s characteristics and the level of current flowing through it. The device also serves as a protection component, as it blocks currents that exceed its rated reverse current.
The working principle of the 1PMT5922BE3/TR13 is based on the avalanche breakdown process. This process occurs when electric field intensity within a semiconductor diode exceeds the critical value, causing electrons to be accelerated to energies higher than the band gap of the semiconductor. This causes further electrons to be released, resulting in a sudden exponential increase in the current. With the 1PMT5922BE3/TR13, this breakdown process occurs at 27 volts and is clamped between 0.5 and 5 mA.
The 1PMT5922BE3/TR13 is also widely used in temperature compensation circuits, as its zener operating point can be adjusted by controlling the current flowing through it. This enables the device to create accurate voltage reference points, which are necessary for sample and hold circuits, analog-to-digital converters, and sensors. Additionally, due to its low thermal resistance rating, the 1PMT5922BE3/TR13 is a suitable choice for smaller applications that require consistent performance over a wide temperature range.
Overall, the 1PMT5922BE3/TR13 is a single, Surface-mount zener diode with a breakdown voltage of 27 volts. It is used mainly for voltage regulation and temperature compensation and features a low thermal resistance of 40 mW/K, a maximum zener impedance of 50 Ω, and a small package size of 1.2 X 0.6mm. Its low thermal resistance rating makes it suitable for board-level applications, and its natural breakdown process makes it an ideal choice for consistency and accuracy in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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