Allicdata Part #: | 1PMT5922BT1G-ND |
Manufacturer Part#: |
1PMT5922BT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 7.5V 3.2W POWERMITE |
More Detail: | Zener Diode 7.5V 3.2W ±5% Surface Mount Powermite |
DataSheet: | 1PMT5922BT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 7.5V |
Tolerance: | ±5% |
Power - Max: | 3.2W |
Impedance (Max) (Zzt): | 3 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 6V |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | Powermite |
Base Part Number: | 1PMT5922 |
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Introduction
The 1PMT5922BT1G is a fast, low-power, low-cost Reverse Breakdown (Zener) diode specifically designed to provide superior ESD protection in mobile handsets. This Zener Diode operates in both breakdown and avalanche modes for effective ESD protection.
Application Field
1PMT5922BT1G is designed for ESD protection where high-speed iPhone and other mobile handsets are concerned. It provides superior protection against electrostatic charge, protecting the handset from catastrophic damage. Typical applications include ESD protection for the battery, CODEC and other circuits.
Working Principle
The 1PMT5922BT1G has two main modes of operation- breakdown and avalanche. When a large electrostatic discharge is presented to the device, the reverse voltage across the Zener diode increases rapidly. As the voltage builds up, the current flowing through the diode starts to increase, breaking down the diode\'s junction at a specific threshold. This causes the current to be injected into the ESD path, which then diffuses the ESD charge across the load and eventually dissipates the harmful energy. As the reverse voltage continues to increase, the current reaches an avalanche state, where a large number of carriers are injected into the diode\'s junction, creating the avalanche effect, which further dissipates the charge.
The 1PMT5922BT1G has a fast response time, which is important in protecting the handset from ESD damage. This Zener Diode is built using semiconductor technology, which allows for very low power operation, resulting in minimal power consumption by the mobile handset.
Conclusion
The 1PMT5922BT1G diode is designed to provide superior ESD protection for mobile handsets. This Zener Diode has two main modes of operation: breakdown and avalanche. It has a fast response time and minimal power consumption, enabling it to effectively protect the handset from ESD damage. This diode is applicable in ESD protection of battery, CODEC and other circuits in mobile handsets.
The specific data is subject to PDF, and the above content is for reference
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