Allicdata Part #: | 1PMT5928B/TR13-ND |
Manufacturer Part#: |
1PMT5928B/TR13 |
Price: | $ 1.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 13V 3W DO216AA |
More Detail: | Zener Diode 13V 3W ±5% Surface Mount DO-216AA |
DataSheet: | 1PMT5928B/TR13 Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 1.03194 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 13V |
Tolerance: | ±5% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 7 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 9.9V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | DO-216AA |
Base Part Number: | 1PMT5928 |
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Introduction
1PMT5928B/TR13 is a single Zener diode which is an essential component in the electrical engineering industry. It can be used in many applications including but not limited to voltage regulation and clamping. This diode is mainly constructed of a silicon body, with a range of anode and cathode types including wire bond, uninsulated tab and insulated tab. 1PMT5928B/TR13 has a maximum reverse peak power of 250 mW, a maximum forward voltage drop of 0.6V, a maximum surge current of 400mA, and a maximum surge reverse power of 500mW.
Application Field
1PMT5928B/TR13 has a wide range of applications, mainly in the area of voltage regulation and clamping. In voltage regulation, the diode can be used to limit the voltage applied to circuits. This is done by allowing the specified voltage to pass through the circuit until it reaches the diode, which acts as a barrier, blocking any additional voltage from passing. This ensures that circuits are not over-exposed to voltage.
The diode can also be used to limit the flow of electricity. This is mainly done in applications where the diode is used as a temperature-independent reference source to provide a stable voltage. This helps to protect sensitive circuits from high voltages, while also providing a source of reference which can be used to precisely calibrate devices.
1PMT5928B/TR13 can also be used in voltage clamping applications. This involves using the diode to absorb any excess voltage, protecting the circuits from power surges. The diode\'s junction works as a limiter, blocking any surges above the diode\'s maximum forward voltage drop and allowing the remaining voltage to pass.
Working Principle
1PMT5928B/TR13 operates on an intricate principle. The diode is constructed of a silicon body, and uses what is known as a double-barrier design. This creates two separate junctions, one between the anode and the cathode, and one between the cathode and the silicon body. At the same time, the diode also produces what is known as a space charge layer. This layer is created by the electrons and holes present in the junctions.
When voltage is applied to the diode, the anode and cathode junctions become forward biased, allowing current to easily flow through the diode. As current passes through the diode, it is then blocked by the space charge layer, limiting the amount of current which can flow through the diode. This helps to regulate the voltage and prevent circuits from being over-exposed to voltage.
1PMT5928B/TR13 also uses what is known as a Zener breakdown effect to absorb any reverse voltage which is higher than its maximum reverse peak power. This occurs when the electric field inside the diode reaches a critical value, and electrons are kicked loose from their atoms, thus creating a stream of current in the opposite direction. This allows the diode to absorb any excess voltage, protecting the circuit from power surges.
Conclusion
1PMT5928B/TR13 is a single Zener diode with a wide range of applications in the electrical engineering industry. These include voltage regulation, as well as clamping, where it can be used to limit the amount of voltage passing through a circuit, or absorb excess voltage from power surges. The diode works on an intricate principle involving the creation of a space charge layer, as well as a Zener breakdown effect.
The specific data is subject to PDF, and the above content is for reference
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