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Diodes - Zener - Single

1PMT5938B/TR13 is part of the family of single Zener diodes introduced by ST Microelectronics. It is a silicon epitaxial planar design with a high energy PN junction that is especially designed for applications such as digital circuits, power conversions, and circuits requiring Zener diode operation in the breakdown region.

Application Fields

1PMT5938B/TR13 is a low power Zener diode with a low voltage of 9.1 V and a low maximum power dissipation of 500 mW. It can be used in circuits like voltage regulators and protection circuits. It is also suitable for consumer electronics and automotive applications where low power dissipation is needed. It can also be used in AC/DC converters due to its very low voltage, allowing for more efficient converters.

Working Principle

1PMT5938B/TR13 is designed so that when the forward voltage is applied to the diode, the silicon PN junction is forward biased. Electrons are then injected in the depletion layer to fill up vacancies and the depletion layer becomes thicker. When the voltage reaches its breakdown voltage, the negative impact of electric field increases, resulting in a higher current flow. As the current continues to increase, a Zener breakdown occurs, creating a very high reverse current.

When the reverse (typically shorted) voltage is applied to the diode, the depletion layer becomes thinner as electrons are injected from the PN junction into the depletion layer. As the voltage increases, the current increases dramatically, causing the reverse voltage to drop, thus protecting circuits from overvoltage.

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