1PMT5940C/TR13 Allicdata Electronics
Allicdata Part #:

1PMT5940C/TR13-ND

Manufacturer Part#:

1PMT5940C/TR13

Price: $ 1.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 43V 3W DO216AA
More Detail: Zener Diode 43V 3W ±2% Surface Mount DO-216AA
DataSheet: 1PMT5940C/TR13 datasheet1PMT5940C/TR13 Datasheet/PDF
Quantity: 1000
12000 +: $ 1.28772
Stock 1000Can Ship Immediately
$ 1.43
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 43V
Tolerance: ±2%
Power - Max: 3W
Impedance (Max) (Zzt): 53 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 32.7V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216AA
Base Part Number: 1PMT5940
Description

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1PMT5940C/TR13 devices are widely used in various applications as general purpose Zener diodes, due to their high performance capabilities. The 1PMT5940C/TR13 is a single element type device with a nominal breakdown voltage of 19V. It has a high thermal stability and a low reverse leakage current, thus allowing it to be used in applications that require stringent regulation of voltage and current levels.

The working principle of 1PMT5940C/TR13 is based on the reverse breakdown effect of the diode. The 1PMT5940C/TR13 is a PN junction diode, which has a typical turn-on voltage of 5V to 6V, depending on the current flow. When the applied voltage is increased to a level which is greater than the breakdown voltage, the diode conducts with a high current density and the resulting current flow is known as the reverse breakdown current or the Zener current.

The working principle of 1PMT5940C/TR13 is best understood by considering the electric field inside the junction region. When forward bias is applied to the diode, a high electric field is created across the junction region due to the electrostatic attraction of the P-type and N-type doping regions. This electric field causes the free electrons to accelerate across the junction region and recombine with the holes near the depletion region. When the applied reverse bias is increased to the breakdown voltage, this electric field becomes high enough to cause electrons to recombine with the holes and create a current that propagates across the junction region.

The 1PMT5940C/TR13 is suitable for use in various applications such as voltage regulation, voltage clamping, reverse polarity protection, and overvoltage protection. It is used in voltage regulators and transistor clipper circuits to prevent overvoltage damage to the components in the circuitry. It is also used as a “crowbar” clamping element in wide range of protection circuits to protect the circuit from any overvoltage faults. The device is also used in many control circuits where a Zener diode with a specific breakdown voltage is required for precision voltage control.

The 1PMT5940C/TR13 is an ideal choice for applications that require reliable operation over a wide range of temperature, load, and reverse bias conditions. This device offers high power dissipation and low dynamic impedance, allowing it to handle large peak stresses with minimal de-rating. Its temperature stable characteristics make the device very attractive for use in precision voltage regulation and protection circuits. The device is manufactured using advanced semiconductor technology for superior reliability, performance, and cost effectiveness.

Due to its various features and reliability, the 1PMT5940C/TR13 has become increasingly popular as one of the most reliable and cost effective Zener diodes available in the market. While being suitable for various applications, the device is also RoHS compliant, making it an ideal choice for many end user applications.

The specific data is subject to PDF, and the above content is for reference

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