Allicdata Part #: | 1PMT5949/TR7-ND |
Manufacturer Part#: |
1PMT5949/TR7 |
Price: | $ 1.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 100V 3W DO216AA |
More Detail: | Zener Diode 100V 3W ±20% Surface Mount DO-216AA |
DataSheet: | 1PMT5949/TR7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.03194 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 100V |
Tolerance: | ±20% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 250 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 76V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | DO-216AA |
Base Part Number: | 1PMT5949 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PMT5949/TR7 is a single, Zener diode with a low-power dissipation design of 1.3 watts. Its leadless package offers improved thermal performance and a good choice for board-level protection applications. The PMT5949/TR7 can be used for secondary protection and communications applications in devices such as cell phones, LCD screens and cameras.
The device consists of a silicon PN junction and a Zener element. When the reverse breakdown voltage of the silicon PN junction is exceeded, the current through the junction expands rapidly. This produces a high inversion current in the Zener element, allowing electrons to escape from the junction, creating a zener breakdown effect.
The PMT5949/TR7 is designed for 6V and 7.5V applications, with a maximum breakdown voltage of 6.5V and 8V respectively. The breakdown voltage is set at a nominal 6V and 7.5V, to provide best performance in applications that require an overvoltage or undervoltage protection. The device has a low power dissipation, with an operating current range of 25 to 400mA and a maximum power dissipation of 1.3W. An internal silicon nitride passivation will prevent thermal runaway and minimize moisture absorption.
In terms of its working principle, the PMT5949/TR7 behaves like a normal diode, except when the applied reverse voltage increases beyond its Zener breakdown voltage, the current through the device increases sharply. This rapid increase in current results in an increase in the device\'s reverse voltage, allowing electrons to escape from the junction, resulting in the zener breakdown effect. The result is a regulated voltage that is unaffected by changes in the current, thus providing excellent reverse voltage protection and overvoltage protection.
In addition, the PMT5949/TR7 is designed for applications such as board-level protection, secondary protection and communications, as well as being suitable for applications in devices such as cell phones, LCD screens and cameras. It can be used in various power supplies and in power distribution systems. Furthermore, the device features a low-power dissipation design and an internal silicon nitride passivation, which ensures that the device is reliable and robust.
In conclusion, the PMT5949/TR7 is an ideal solution for applications that require excellent overvoltage protection and robust electrical protection features. The device features a low-power dissipation design with an internal silicon nitride passivation, and can be used in a variety of power supplies and power distribution systems.
The specific data is subject to PDF, and the above content is for reference
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