1PMT5954AE3/TR13 Allicdata Electronics
Allicdata Part #:

1PMT5954AE3/TR13-ND

Manufacturer Part#:

1PMT5954AE3/TR13

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 160V 3W DO216AA
More Detail: Zener Diode 160V 3W ±10% Surface Mount DO-216AA
DataSheet: 1PMT5954AE3/TR13 datasheet1PMT5954AE3/TR13 Datasheet/PDF
Quantity: 1000
12000 +: $ 0.34398
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 160V
Tolerance: ±10%
Power - Max: 3W
Impedance (Max) (Zzt): 700 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 121.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216AA
Base Part Number: 1PMT5954
Description

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Diodes - Zener - Single - 1PMT5954AE3/TR13 application field and working principle

Zener diodes have a huge application field due to its major characteristic - breakdown voltage. Its applications range from voltage regulation, signal conditioning and protection devices to surge absorbers. 1PMT5954AE3/TR13 is a general-purpose 400mW (1.3V 28mA) Zener Diode developed by Mospec Semiconductor.

1PMT5954AE3/TR13 application field:

  • Voltage regulation
  • Surge absorbers
  • Clipping and clamping circuits
  • Sampling circuits
  • Signal conditioning
  • Protection devices

1PMT5954AE3/TR13 working principle:

Like most other Zener diodes, 1PMT5954AE3/TR13 also works on the principle of Zener breakdown. Zener breakdown basically occurs when higher Electric field is applied across an intrinsic semiconductor and it causes electrons to be ejected from the atoms. This in turn disengages the covalent bonds between the atoms and hence forming a weak point which is a potential junction for electrons to flow. This phenomenon can also occur in p-n junction but the amount of electric field exerted on the junction needs to be higher than the amount of electric field needed to break down the Zener Junction.

When Zener breakdown occurs, the junction region of 1PMT5954AE3/TR13 would become open and allow electrons to flow through. This produces a large reverse current at the junction and thus generating a voltage drop across the diode. This voltage drop of 1PMT5954AE3/TR13 can be set to the desired value by varying the electric field applied and therefore regulating the voltage across the diode. Other than using it in voltage regulation applications, Zener diodes can also be used in signal conditioning and protection circuits due to their high reverse energy ratings.

In summary, 1PMT5954AE3/TR13 is a Zener Diode which can work in different application fields from voltage regulation to signal conditioning. Its working principle is based on the Zener breakdown which occurs when higher than usual electric field is applied. This produces a large reverse current in the junction and establishing a potential junction for electrons to move through.

The specific data is subject to PDF, and the above content is for reference

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