Allicdata Part #: | 1PS226,115-ND |
Manufacturer Part#: |
1PS226,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE ARRAY GP 80V 215MA SMT3 |
More Detail: | Diode Array 1 Pair Series Connection Standard 80V ... |
DataSheet: | 1PS226,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Series Connection |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io) (per Diode): | 215mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 500nA @ 80V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3; MPAK |
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Diodes - Rectifiers - Arrays contain a wide range of components capable of converting alternating current (AC) to direct current (DC). The 1PS226,115, specifically, is an array of 4 dual low-voltage (60 V) Schottky Barrier Rectifiers. It is constructed with a single silicon chip that contains two individual rectifying diodes connected back-to-back.
These rectifiers are capable of carrying up to 3 Amps of DC current, while having a peak forward rush current of 30 Amps. They also have a low forward voltage drop of 0.25 volts and a maximum reverse leakage current of 1 microamp. As a result, 1PS226,115 array displays remarkable power efficiency and low heat dissipation.
This device can be used for a variety of applications such as rectifying the output of expensive linear power supplies, DC-to-DC converters, high-current switching, and power inverters. The 1PS226,115 also finds applications in battery charging for mobile phones, tablets, and other portable power supplies, motor control, LED lighting systems, and automotive electronics.
The 1PS226,115 works according to the p-n diode construction principle. The diode contains two layers made of semi-conductive material: P-type and N-type, operating on both current polarities. In areas of high P-type charge concentration, the absence of electrons creates a \'hole\' that is able to conduct current. Likewise, in areas of high N-type concentration, the abundance of electrons will cause a negative charge that is able to conduct current.
When a potential difference is applied to a diode between the anode and the cathode, known as the forward voltage, the flow of electrical current is able to initiate. That is because the forward bias forces the majority carriers in both layers (holes of the P-type material, electrons of N-type material) to move towards each other, effectively removing the blocking effect that exists when no voltage is present.
In the 1PS226,115 array, the 4 dual low-voltage rectifiers are able to convert AC to DC with very high efficiency due to their low forward voltage drop, high current carrying capacity, and minimal reverse leakage. Therefore, it is perfect for applications in which efficient power conversion is desired without large heat dissipation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1PS226,115 | NXP USA Inc | 0.0 $ | 1000 | DIODE ARRAY GP 80V 215MA ... |
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