1SMB33AT3G Allicdata Electronics

1SMB33AT3G Circuit Protection

Allicdata Part #:

1SMB33AT3GOSTR-ND

Manufacturer Part#:

1SMB33AT3G

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 33V 53.3V SMB
More Detail: N/A
DataSheet: 1SMB33AT3G datasheet1SMB33AT3G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Current - Peak Pulse (10/1000µs): 11.3A
Base Part Number: 1SMB
Supplier Device Package: SMB
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 510pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: --
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Voltage - Reverse Standoff (Typ): 33V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes: 1SMB33AT3G Application Field and Working Principle

Transient Voltage Suppressors (TVS) are often used in electronic protection technology. The 1SMB33AT3G TVS is one of the commonly used diode products. It offers function with excellent durability in a wide temperature range, making it the ideal choice for certain applications. This article will explain the application field and working principle of the 1SMB33AT3G TVS.The 1SMB33AT3G TVS is suitable for applications running in a temperature range from -65°C to 175°C. It has an operating voltage range from 6.5V to 176V and a breakdown voltage range from 11.7V to 195V. The protection level provided by this TVS is up to 1500W (8/20μs). This makes the 1SMB33AT3G TVS an ideal solution for a variety of automotive, industrial, and communications applications.The 1SMB33AT3G TVS works by utilizing the Zener voltage effect between P and N type semiconductors within the diode device. When a transient voltage or current surge exceeds the breakdown voltage of the diode, electrons can flow from the P to the N type semiconductor, reducing the voltage level across the diode. To increase the effectiveness of this process, certain protection structures have been incorporated into the design of the 1SMB33AT3G TVS, such as the addition of protective layers between the P and N type semiconductor materials.Information about the structure of the 1SMB33AT3G TVS can also be found in the data sheet available on the vendor\'s website. In addition, there are other features available such as ultra-low capacitance, high surge capability, advanced packaging design, and silicon nitride passivation technology which are all designed to optimize performance.The main advantages of using the 1SMB33AT3G TVS are its wide voltage and temperature range, high level of protection, and flexibility to use in various application fields. It is also an easy to use and cost-effective solution for electronic protection applications.In conclusion, the 1SMB33AT3G is an excellent choice for applications requiring protection from transient voltage surge. Its wide temperature range and easy to use design make it a favorite among electronics professionals. With its high protection level, it can protect components and circuits from electrical overstress, saving time, money, and repair costs.

The specific data is subject to PDF, and the above content is for reference

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