1SMB5941HM4G Allicdata Electronics
Allicdata Part #:

1SMB5941HM4G-ND

Manufacturer Part#:

1SMB5941HM4G

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 47V 3W DO214AA
More Detail: Zener Diode 47V 3W ±5% Surface Mount DO-214AA (SMB...
DataSheet: 1SMB5941HM4G datasheet1SMB5941HM4G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.06480
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 47V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 67 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 35.8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Description

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The 1SMB5941HM4G is a type of Zener diode, a component in an electronic circuit which specifically uses an electric current passing through a reverse-biased P-N junction. This creates a breakdown voltage that helps regulate the current in the circuit. It is a single unit type, meaning it contains a single electrically isolated diode. Specifically, the 1SMB5941HM4G is a 5.6 V silicon diode designed to withstand 500 mW of power.

The 1SMB5941HM4G diode has various practical applications. Most significantly, its voltage-regulating capabilities make it a great choice for circuit protection and noise reduction. In combination with a resistor and capacitor, a Zener diode can be used to regulate the voltage in any kind of power supply circuit. Zener diodes can also be used in clamping circuits, where they safeguard components from high-voltage spikes.

The working principle of the 1SMB5941HM4G involves electrons passing through the diode\'s reverse-biased P-N junction, releasing energy in the form of visible light and heat. When a reverse voltage is applied to the diode, electrons and holes collapse into the depletion layer, combining with each other and causing a sudden depletion in the depletion layer. This breakdown of the P-N junction and consequent discharge of electrons is what produces the voltage-regulating effect in the diode, allowing it to regulate the current in the circuit.

The 1SMB5941HM4G also has a wide range of other uses due to its breakdown voltage and wide operating temperature range. It is particularly suited to military and aerospace applications; where its low voltage and power rating make it a great choice for lightweight, energy-efficient designs. Zener diodes are also widely used in digital systems, where their clamping capabilities can be used to prevent unwanted noise from disrupting operation. In switching systems, 1SMB5941HM4Gs can be used to prevent surges and transients, while in optoelectronic switches they can help prevent voltage spikes and misfiring.

The 1SMB5941HM4G is, therefore, a versatile and effective component with a wide range of applications. With its five-volt Zener breakdown voltage, 500 mW power rating, and wide operating temperature range, it is the ideal choice for complex, energy-efficient circuit design. Its voltage regulating capabilities, combined with its relatively low price, make it a great choice for any type of circuit protecting, noise reducing, surge protecting, and optoelectronic applications.

The specific data is subject to PDF, and the above content is for reference

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