| Allicdata Part #: | 1SMB5953HM4G-ND |
| Manufacturer Part#: |
1SMB5953HM4G |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER 150V 3W DO214AA |
| More Detail: | Zener Diode 150V 3W ±5% Surface Mount DO-214AA (SM... |
| DataSheet: | 1SMB5953HM4G Datasheet/PDF |
| Quantity: | 1000 |
| 6000 +: | $ 0.06480 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 150V |
| Tolerance: | ±5% |
| Power - Max: | 3W |
| Impedance (Max) (Zzt): | 600 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 114V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | DO-214AA (SMB) |
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Diodes - Zener - Single
The 1SMB5953HM4G is a 500mW Zener diode that is used primarily in voltage regulation, voltage clamping and over-voltage protection circuits. It is available in an ultra small SOD-323 (SC-79) Surface Mounted Device (SMD) package. The device is well suited for various applications in the automotive, industrial and computer equipment markets for such items as cell phones and PDAs.
Structure and Practical Applications
The 1SMB5953HM4G is a planar, double avalanche breakdown rectifier that has a reverse avalanche breakdown voltage VR(BR) of 5.1V. It features a maximum zener impedance of 1Ω at the zener voltage of 5V The maximum operating temperature is typically 125°C, although it is recommended that the temperature not exceed 150°C. The device also meets RoHS requirements and is compliant with JEDEC standards.
The 1SMB5953HM4G is particularly well suited for applications such as over-voltage protection and voltage clamping. It offers the benefits of small size, high current ratings and high temperature operation. It is specified for use in high-power circuits that operate at up to 125°C. Additionally, the device is AEC Qualified and RoHS Compliant.
Working Principle
The 1SMB5953HM4G consists of a p-n junction diode with a high conduction resistance. When a voltage greater than the zener voltage is applied to the anode and the cathode, the valence electrons of the p-region move toward the n-region and start the avalanche breakdown. The zener voltage is the voltage at which the device starts to conduct and the avalanche breakdown occurs. The avalanche breakdown current is limited by the voltage drop across the diode and the resistance of the diode to current flow. As the voltage increases, the diode begins to conduct more current, thus regulating the voltage.
If the voltage exceeds the breakdown voltage, the diode also acts as a clamping device. The electrical properties of a zener diode can be largely attributed to its resistance to current flow, which allows it to regulate voltage, as well as provide a voltage clamping effect. This resistance is also responsible for the effective temperature and power increases at higher current levels.
Conclusion
The 1SMB5953HM4G is a 500mW Zener diode that is suitable for use in both commercial and industrial applications. It offers the benefits of a small size, high current ratings and high temperature operation, making it an ideal choice for over-voltage protection and voltage clamping. Its good resistance to current flow allows it to both regulate and clamp voltage, which provides reliable protection in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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1SMB5953HM4G Datasheet/PDF