1SV325,H3F Discrete Semiconductor Products |
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Allicdata Part #: | 1SV325H3FTR-ND |
Manufacturer Part#: |
1SV325,H3F |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | DIODE VARACTOR 10V ESC |
More Detail: | Varactor Single 10V Surface Mount ESC |
DataSheet: | 1SV325,H3F Datasheet/PDF |
Quantity: | 4000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
4000 +: | $ 0.05477 |
8000 +: | $ 0.05173 |
12000 +: | $ 0.04717 |
28000 +: | $ 0.04413 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Capacitance @ Vr, F: | 12pF @ 4V, 1MHz |
Capacitance Ratio: | 4.3 |
Capacitance Ratio Condition: | C1/C4 |
Voltage - Peak Reverse (Max): | 10V |
Diode Type: | Single |
Q @ Vr, F: | -- |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | ESC |
Base Part Number: | 1SV325 |
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Varicaps, also referred to as varactors, are a type of diode whose capacitance changes as its controlling voltage varies. The variable capacitance effect is achieved by utilizing an avalanche breakdown current flowing between the two electrodes of a diode. The most common type of variable capacitance diode is identified by its type suffix 1SV325, H3F, and is used in many applications. This device has a wide operating voltage range, ranging from 35V to 400V, with a maximum reverse voltage of 450V. It is rated for 300mA maximum current, with a junction temperature range of 55°C to 150°C. Variable capacitance diodes are used in several different areas within the electronics industry due to their distinct characteristics. Their most common application is in Radio Frequency applications as adjustable frequency tuning elements. In this application, the devices are typically biased to operate in the avalanche breakdown current region. By varying the DC supply voltage, it is possible to adjust the cut off frequency of the diode, hence allowing for frequency tuning.Also, due to their low exponential variation of capacitance versus voltage characteristics, these diodes make for excellent oscillator applications, especially for low frequency and low power applications. In this application, the device is used in conjunction with an integrating RC circuit, where the capacitance is adjusted by the diode voltage, which in turn is manipulated by the output of the oscillator itself. Variable capacitance diodes are also often used for gain control of RF amplifiers, by manipulating the C-V characteristics of the diode with an input signal, to control the output of the RF amplifier. Variable capacitances have been developed to suit a number of specific purposes. For example, the 1SV325, H3F is specially designed to be used in radio receivers. Its low series resistance and relatively constant capacitance variation over voltage allow it to be used in receiver circuits where it can tune in the radio signal accurately. The working principle underlying varicaps or varactors is based on the avalanche current effect established in a semiconductor junction. When a reverse bias voltage is applied to the junction, an avalanche current begins to flow and the capacitance of the junction changes. The capacitance of the varactor is analogous to a capacitor in series with a resistor, where the current through the resistor causes the voltage across the capacitor to vary. Thus, the higher the current, the higher the capacitance.In the case of the 1SV325, H3F, the capacitance changed depends on the reverse voltage applied to the device. As the reverse voltage increases, the capacitance increases in a linear manner. The device can be used to create an oscillator circuit with an integrating RC network where the capacitance of the device directly affects the frequency of the oscillation. By varying the voltage, the capacitance can be adjusted which in turn modifies the tuning of the oscillator. The 1SV325, H3F has a relatively high capacitance ratio, meaning that a small change in voltage can cause a large change in capacitance. This feature makes it ideal for use in RF applications, like frequency tuning in radio receivers and gain control of RF amplifiers, since the device can be adjusted over a wide range with a small input voltage. In conclusion, the 1SV325, H3F is a type of variable capacitance diode that is widely used in the electronics industry. Its features and capabilities make it a desirable choice for applications like frequency tuning and gain control in RF circuits. Its linear capacitance-voltage trait makes it highly customizable and allows it to be easily adjusted with a small input voltage. Thus, it is an increasingly popular component in RF circuits.
The specific data is subject to PDF, and the above content is for reference
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