1SV308(TH3,F) Discrete Semiconductor Products |
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Allicdata Part #: | 1SV308(TH3F)CT-ND |
Manufacturer Part#: |
1SV308(TH3,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | DIODE PIN 30V ESC |
More Detail: | RF Diode PIN - Single 30V 50mA ESC |
DataSheet: | 1SV308(TH3,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.5pF @ 1V, 1MHz |
Resistance @ If, F: | 1.5 Ohm @ 10mA, 100MHz |
Operating Temperature: | 125°C (TJ) |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | ESC |
Base Part Number: | 1SV308 |
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The 1SV308 (TH3,F) is a RF diode that plays a very important role in the field of radio frequency engineering. It is used as an amplifier in many radio devices such as radios,TVs, cell phones, etc. This diode is an ideal choice for performing many radio frequency operations and requires very little power compared to other diodes.
The RF diode 1SV308 is a three layer semiconductor device. It is composed of two p and n layers and a heated oxide layer. The oxide layer creates a highly resistive electric field, allowing only certain currents to pass and block others. The device works by controlling the current that flows from one p-n junction to the other. The diode operates at frequencies between 10MHz to 40GHz.
The 1SV308 (TH3,F) is an ideal device for amplifying low level signals, controlling high level signals, modulating signals, and for other complex frequency operations. The signal can be modulated by changing the bias voltage. For example, a signal voltage of 0.3V can be amplified to 1V when the bias voltage is increased from 3V to 5V. It can also be used as a signal switcher, transmitting the signal between two distinct frequencies.
The 1SV308 (TH3,F) is a versatile diode with several applications, such as phase-frequency modulation, signal compression, signal phase shifting, and high-speed frequency switching. It is also used in oscillators and in radio receivers. Its high Q factor and low noise make it an ideal device for radio frequency circuits. The device also provides low SC noise and low harmonic distortion.
The working principle of 1SV308 (TH3,F) is based on the principle of tunneling. Electrons are injected into the p-type layers and then drift toward the n-type layer. The electrons then tunnel through the oxide layer, creating a potential barrier that blocks the current. This helps to control the signal from one side of the diode to the other. As the current is changed, the voltage across the diode varies and hence the signal is amplified.
In conclusion, the 1SV308 (TH3,F) is an ideal choice for radio frequency engineering applications. It can amplify signals, modulate signals, and switch between different frequencies. It also has a low SC noise and low harmonic distortion, which makes it suitable for various radio frequency operations. With its many advantages, the 1SV308 (TH3,F) is gaining a lot of popularity in the radio frequency engineering field.
The specific data is subject to PDF, and the above content is for reference
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