275-101N30A-00

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The 275-101N30A-00 is a RF MOSFET that is used to provide power amplifier applications where significant output power, low noise, and linearity is of particular importance. The device has a 6-pin package, and can operate in frequencies up to 3 GHz. It is a common choice for applications such as amplifying cellular signals, radio transceivers, GPS receivers, and digital satellite systems, among others. It has a low noise figure of 5dB at 1 kHz, so it is especially suitable for applications where low noise and linearity are paramount.

The primary function of a RF MOSFET is to allow power amplification from an input signal or bias. The 275-101N30A-00 is a N-channel, enhancement-type MOSFET, meaning that it does not require an initial gate voltage to be switched on. It can be used in an inverting amplifier circuit, meaning that the output signal is a version of the input signal with inverted polarities. Additionally, the device can be used in single ended and push-pull amplifier configurations. The high breakdown voltage and max. drain current values of this MOSFET make it ideal for amplifier applications that require a large amount power.

The working principle behind the 275-101N30A-00 is that of the capacitance of its gate. When a bias voltage is applied to the gate, the device’s internal capacitance shifts, allowing current to flow between the drain and source. This action is similar to that of a switch, allowing current to flow while it is in the on-state. When no bias voltage is present, the device is in the off-state and no current flows.

The 275-101N30A-00 is an excellent choice for high-frequency amplifier applications. Its exceptional performance characteristics, in combination with its relatively low cost, make it a popular device for a variety of RF amplification tasks. In particular, its ability to operate in frequencies up to 3 GHz makes it a frequent choice for designing digitally modulated systems, such as GPS receivers and other digital satellite systems.

The device has a relatively low drain-source capacitance, which allows for faster switching times and less distortion when amplifying signals that are modulated at the high frequencies the 275-101N30A-00 is capable of operating at. This makes it especially desirable when amplifying digital modulation systems, like those used in cellular networks and digital satellite services.

The 275-101N30A-00 RF MOSFET is able to provide excellent performance and a wide range of functionality in a variety of applications. Its 6-pin package, low noise figure, and high power handling capability make it ideal for many amplifier projects. Additionally, its ability to switch quickly and reduce distortion makes it an ideal choice for applications like cellular and digital satellite systems that require high-speed noise immunity.

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